1,064 research outputs found

    DSS-Saltirsoil: un sistema de ayuda a la decisión en internet para la obtención de recomendaciones de gestión del riego y el cultivo en tierras amenazadas por salinización

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    En el presente trabajo se presenta un ejemplo de utilización del sistema de ayuda a la decisión DSS-SALTIRSOIL para la recomendación del riego en una plantación de caqui “Rojo Brillante” en la zona de riegos del Magro de la Ribera del Xúquer (Valencia). De acuerdo con la simulación realizada con datos de la zona representativos de su meteorología (año 2010), suelo (franco arcilloso), calidad de agua (2.3 dS/m) y manejo del riego (goteo) y el cultivo, se esperaría una pérdida del 15% de producción como consecuencia de la salinización. Un incremento de la dotación anual de riego de 140 mm, o una disminución de la salinidad hasta 2.0 dS/m reducirían dicha pérdidas a tan solo un 10% en dicho año de meteorología media. No obstante, la simulación del periodo 2000-2015 indica que una disminución de 100 mm en la precipitación anual media supone una amenaza de pérdida de producción de más del 20% en promedio. En consecuencia una solución satisfactoria a los problemas de salinidad en el cultivo del caqui en la zona pasa necesariamente por usar aguas de riego de salinidad más baja (< 2.0 dS/m), o bien por un cambio del patrón del caqui a uno más tolerante a la salinidad como es el D. virginiana.In this article an example of utilization of the decision support system DSSSALTIRSOIL is shown for the recommendation of irrigation in a persimmon "Rojo Brillante" plantation in the Magro irrigation district in the Ribera del Xúquer (Valencia). According to the simulation carried out with data from the area, which is representative of the meteorology (2010), soil (clay loam), water quality (2.3 dS / m) and irrigation (drip) and crop management, 15% yield losses would be expected as a result of salinization. An increase in the annual irrigation dose of 140 mm, or a decrease in salinity down to 2.0 dS / m would reduce such losses to only 10% in such a year of average meteorology. However, the simulation of the span 2000-2015 indicates that an average decrease of 100 mm in the annual rainfall poses a threat of yield losses over 20% on average. Consequently a satisfactory solution for the salinity problems in persimmon cropping in the area necessarily involves using irrigation water of lower salinity (<2.0 dS / m), or replacing the persimmon rootstock by a more salttolerant one such as the D. virginiana.Ministerio de Ciencia e Innovación 14592-C02-01Ministerio de Ciencia e Innovación CGL2009-14592-C02-0

    ASTRI SST-2M prototype and mini-array simulation chain, data reduction software, and archive in the framework of the Cherenkov Telescope Array

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    The Cherenkov Telescope Array (CTA) is a worldwide project aimed at building the next-generation ground-based gamma-ray observatory. Within the CTA project, the Italian National Institute for Astrophysics (INAF) is developing an end-to-end prototype of the CTA Small-Size Telescopes with a dual-mirror (SST-2M) Schwarzschild-Couder configuration. The prototype, named ASTRI SST-2M, is located at the INAF "M.C. Fracastoro" observing station in Serra La Nave (Mt. Etna, Sicily) and is currently in the scientific and performance validation phase. A mini-array of (at least) nine ASTRI telescopes has been then proposed to be deployed at the Southern CTA site, by means of a collaborative effort carried out by institutes from Italy, Brazil, and South-Africa. The CTA/ASTRI team is developing an end-to-end software package for the reduction of the raw data acquired with both ASTRI SST-2M prototype and mini-array, with the aim of actively contributing to the global ongoing activities for the official data handling system of the CTA observatory. The group is also undertaking a massive Monte Carlo simulation data production using the detector Monte Carlo software adopted by the CTA consortium. Simulated data are being used to validate the simulation chain and evaluate the ASTRI SST-2M prototype and mini-array performance. Both activities are also carried out in the framework of the European H2020-ASTERICS (Astronomy ESFRI and Research Infrastructure Cluster) project. A data archiving system, for both ASTRI SST-2M prototype and mini-array, has been also developed by the CTA/ASTRI team, as a testbed for the scientific archive of CTA. In this contribution, we present the main components of the ASTRI data handling systems and report the status of their development.Comment: Proceedings of the 35th International Cosmic Ray Conference (ICRC 2017), Bexco, Busan, Korea. All CTA contributions at arXiv:1709.0348

    Architettura e Realismo. Programma

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    Il convegno "«Uno spazio reale adeguato»: architettura e realismo", la giornata di studi e mostra "«Il sempre teorizzar nulla rileva...»: nuovo realismo e architettura della città", il convegno "Per una nozione operativa di realismo: espressione critica e impegno civile e la mostra Il realismo nella didattica del progetto: Torino Napoli Milano", uniti sotto il titolo comune di Architettura e realismo sono promossi da un gruppo di lavoro costituito da giovani ricercatori e docenti delle facoltà di Architettura di Torino, Milano e Napoli, a partire dalla avvertita esigenza di aggiornare la riflessione sulla architettura come pratica costruttiva e sulla città come luogo per eccellenza della vita dell'uomo a partire da una analisi critica di quanto si è prodotto negli ultimi decenni. Da un lato grandi architetture spettacolari che rispondono alle logiche del mercato e della comunicazione e, dall'altro - in una sorta di inspiegabile paradosso - la de- regolazione della città diffusa priva di struttura, elementi riconoscibili e spazio pubblico. In entrambi i casi, pur nella loro diversità, si è prodotto un pericoloso distacco della architettura dal suo obiettivo ultimo: conformare lo spazio fisico dei manufatti e della città, del territorio e del paesaggio, per determinare in maniera consistente lo scenario della vita dell'uomo, nella sua dimensione, innanzitutto, collettiv

    Investigation of inversion domains in GaN by electric-force microscopy

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    Inversion domains in III-nitride semiconductors degrade the performance of devicesfabricated in them. Consequently, it is imperative that we understand their electrostatic manifestation, the growth conditions under which such domains form, and an effective means of their identification. In what is nominally referred to as Ga-polarity samples, N-polarity domains have a polarization that is reversed with respect to the remainder of the surface, and therefore, have a different potential under strain. We have used surface-potential electric-force microscopy (SP-EFM) to image the electrostaticsurface potential of GaNgrown on sapphire, which is strained due to the thermal mismatch between the substrate and GaN. Employing a control sample with side-by-side Ga- and N-polarity regions, we have established the EFM mode necessary to identify inversion domains on GaN samples grown by molecular-beam epitaxy. This method is not sensitive to topology and has a spatial resolution of under 100 nm. The measured surface potentials for Ga-face and N-face regions are +25±10 and −30±10 mV, respectively, with respect to the sapphire substrate, where the sign is consistent with Ga- and N-polarity GaN under compressive strain due to thermal mismatch with the sapphire substrate

    Measuring Performances of a White-Box Approach in the IoT Context

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    The internet of things (IoT) refers to all the smart objects that are connected to other objects, devices or servers and that are able to collect and share data, in order to "learn" and improve their functionalities. Smart objects suffer from lack of memory and computational power, since they are usually lightweight. Moreover, their security is weakened by the fact that smart objects can be placed in unprotected environments, where adversaries are able to play with the symmetric-key algorithm used and the device on which the cryptographic operations are executed. In this paper, we focus on a family of white-box symmetric ciphers substitution-permutation network (SPN)box, extending and improving our previous paper on the topic presented at WIDECOM2019. We highlight the importance of white-box cryptography in the IoT context, but also the need to have a fast black-box implementation (server-side) of the cipher. We show that, modifying an internal layer of SPNbox, we are able to increase the key length and to improve the performance of the implementation. We measure these improvements (a) on 32/64-bit architectures and (b) in the IoT context by encrypting/decrypting 10,000 payloads of lightweight messaging protocol Message Queuing Telemetry Transport (MQTT)

    On the Culture of Scholarship of Teaching and Learning

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    This article welcomes you to the first issue of TLCSD. In this brief paper, the members of the Editorial Board introduce you to the key concepts that include the value of evidence-based education in our field, the nature of SoTL research, and the corresponding framework for the submission categories that you will find within TLCSD. Particular emphasis is placed on describing the peer-review process, specifically the need for peer-reviews that provide constructive feedback that facilitates improvements in the manuscripts

    Growth and Investigation of GaN / AlN Quantum Dots

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    We have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy. The size distribution and density of the QDs have been estimated from an atomic force microscopy study. Very high quantum efficiency of photoluminescence (PL) has been obtained in some samples with QDs. Compared to the GaN bulk samples, it increased by orders of magnitude. In some samples the quantum size effect dominated, resulting in the blue-shift of the QD related PL peak, whereas in the samples with larger dots a red-shift up to 0.8 eV has been observed, which is related to strong polarization effects. We have observed a blue-shift of the PL peak with excitation intensity in the samples with large dots due to screening effect. The temperature-induced quenching of PL occurs at higher temperatures compared to bulk GaN due to the confinement of nonequilibrium carriers in the QDs. An excited state has been observed in some samples
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