Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures.Comment: 8 pages, including 5 figures. v2: Minor clarifying changes in the text and figures. Change of title. As published in PR

Theory of one and two donors in Silicon

We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell correction and a configuration interaction account of the electron-electron correlations. We also derive insightful, yet less accurate, analytical approximations and discuss their validity and limitations -- in particular, for a donor pair, we discuss the single orbital LCAO method, the Huckel approximation and the Hubbard model. Finally we discuss the connection between these results and recent experiments on few dopant devices.Comment: 13 pages, 6 figure

Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors

Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three ferromagnetic transition temperatures, T_1 > T_2 > T_3, with two distinct ferromagnetic regimes existing for T_1 > T > T_2 and T < T_3. Such an intriguing re-entrant ferromagnetism, with a paramagnetic phase (T_2 > T > T_3) between two ferromagnetic phases, arises from a subtle competition between indirect exchange induced by thermally activated carriers in an otherwise empty conduction band versus the exchange coupling existing in the impurity band due to the bound carriers themselves. We comment on the possibility of observing such a re-entrance phenomenon in diluted magnetic semiconductors and magnetic oxides.Comment: 4 pages, 3 figure

Effect of strain on the orbital and magnetic ordering of manganite thin films and their interface with an insulator

We study the effect of uniform uniaxial strain on the ground state electronic configuration of a thin film manganite. Our model Hamiltonian includes the double-exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchange. The strain arises due to the lattice mismatch between an insulating substrate and a manganite which produces a tetragonal distortion. This is included in the model via a modification of the hopping amplitude and the introduction of an energy splitting between the Mn e_g levels. We analyze the bulk properties of half-doped manganites and the electronic reconstruction at the interface between a ferromagnetic and metallic manganite and the insulating substrate. The strain drives an orbital selection modifying the electronic properties and the magnetic ordering of manganites and their interfaces.Comment: 8 pages, 8 figure

Anti M-Weierstrass function sequences

Large algebraic structures are found inside the space of sequences of continuous functions on a compact interval having the property that, the series defined by each sequence converges absolutely and uniformly on the interval but the series of the upper bounds diverges. So showing that there exist many examples satisfying the conclusion but not the hypothesis of the Weierstrass M-test

Transient tunneling effects of resonance doublets in triple barrier systems

Transient tunneling effects in triple barrier systems are investigated by considering a time-dependent solution to the Schr\"{o}dinger equation with a cutoff wave initial condition. We derive a two-level formula for incidence energies $E$ near the first resonance doublet of the system. Based on that expression we find that the probability density along the internal region of the potential, is governed by three oscillation frequencies: one of them refers to the well known Bohr frequency, given in terms of the first and second resonance energies of the doublet, and the two others, represent a coupling with the incidence energy $E$. This allows to manipulate the above frequencies to control the tunneling transient behavior of the probability density in the short-time regim

Quantum fields and "Big Rip" expansion singularities

The effects of quantized conformally invariant massless fields on the evolution of cosmological models containing a ``Big Rip'' future expansion singularity are examined. Quantized scalar, spinor, and vector fields are found to strengthen the accelerating expansion of such models as they approach the expansion singularity.Comment: 7 pages; REVTeX

Tunneling dynamics in relativistic and nonrelativistic wave equations

We obtain the solution of a relativistic wave equation and compare it with the solution of the Schroedinger equation for a source with a sharp onset and excitation frequencies below cut-off. A scaling of position and time reduces to a single case all the (below cut-off) nonrelativistic solutions, but no such simplification holds for the relativistic equation, so that qualitatively different ``shallow'' and ``deep'' tunneling regimes may be identified relativistically. The nonrelativistic forerunner at a position beyond the penetration length of the asymptotic stationary wave does not tunnel; nevertheless, it arrives at the traversal (semiclassical or B\"uttiker-Landauer) time "tau". The corresponding relativistic forerunner is more complex: it oscillates due to the interference between two saddle point contributions, and may be characterized by two times for the arrival of the maxima of lower and upper envelops. There is in addition an earlier relativistic forerunner, right after the causal front, which does tunnel. Within the penetration length, tunneling is more robust for the precursors of the relativistic equation