Electron energy relaxation by phonons in the Kondo condensate

We have used normal metal-insulator-superconductor tunnel junctions as thermometers at sub-Kelvin temperatures to study the electron-phonon (e-p) interaction in thin Aluminum films doped with Manganese, as a function of Manganese concentration. Mn in Al is known to be a Kondo impurity with extremely high Kondo temperature $T_K \sim$ 500 K, thus our results probe the e-p coupling in the fully spin compensated, unitary limit. The temperature dependence of the e-p interaction is consistent with the existing theory for disordered metals, however full theory including the Kondo effect has not been worked out yet. The strength of the interaction decreases with increasing Manganese concentration, providing a means to improve sensitivity of detectors and efficiency of solid state coolers

Comment on "Giant Nernst Effect due to Fluctuating Cooper Pairs in Superconductors" by M.N. Serbyn, M.A. Skvortsov, A.A. Varlamov, and V. Galitski

In a recent Letter, Serbyn et al. [A] investigated thermomagnetic effects above the superconducting transition and generalized previous works for arbitrary magnetic fields and temperatures. While the results of [A] have been confirmed in [B], we have strong objections: (i) According to our results [C], the linear response calculation does not require any correction from the magnetization currents; (ii) The result of [A,B] is giant, because unlike the normal Fermi liquid, it is of zero order in the particle-hole asymmetry. Changing the interaction constant in the Cooper channel leads to ridiculously large results even for nonsuperconducting metals; (iii)Derived in [A] the Einstein-type relation for thermomagnetic coefficient contradicts to text-book results. [A] M.N. Serbyn, M.A. Skvortsov, A.A. Varlamov, V. Galitski, Phys. Rev. Lett. 102, 067001 (2009). [B] K. Michaeli and A.M. Finkel'stein, EPL 86, 27007 (2009). [C] A. Sergeev et al., Phys. Rev. B 77, 064501 (2008)

Effects of two dimensional plasmons on the tunneling density of states

We show that gapless plasmons lead to a universal $(\delta\nu(\epsilon)/\nu\propto |\epsilon|/E_F)$ correction to the tunneling density of states of a clean two dimensional Coulomb interacting electron gas. We also discuss a counterpart of this effect in the "composite fermion metal" which forms in the presence of a quantizing perpendicular magnetic field corresponding to the half-filled Landau level. We argue that the latter phenomenon might be relevant for deviations from a simple scaling observed by A.Chang et al in the tunneling $I-V$ characteristics of Quantum Hall liquids.Comment: 12 pages, Latex, NORDITA repor

Jumps in current-voltage characteristics in disordered films

We argue that giant jumps of current at finite voltages observed in disordered samples of InO, TiN and YSi manifest a bistability caused by the overheating of electrons. One of the stable states is overheated and thus low-resistive, while the other, high-resistive state is heated much less by the same voltage. The bistability occurs provided that cooling of electrons is inefficient and the temperature dependence of the equilibrium resistance, R(T), is steep enough. We use experimental R(T) and assume phonon mechanism of the cooling taking into account its strong suppression by disorder. Our description of details of the I-V characteristics does not involve adjustable parameters and turns out to be in a quantitative agreement with the experiments. We propose experiments for more direct checks of this physical picture.Comment: Final version, as published; 4 pages, 3 figure

Nonequilibrium electrons in tunnel structures under high-voltage injection

We investigate electronic distributions in nonequilibrium tunnel junctions subject to a high voltage bias $V$ under competing electron-electron and electron-phonon relaxation processes. We derive conditions for reaching quasi-equilibrium and show that, though the distribution can still be thermal for low energies where the rate of the electron-electron relaxation exceeds significantly the electron-phonon relaxation rate, it develops a power-law tail at energies of order of $eV$. In a general case of comparable electron-electron and electron-phonon relaxation rates, this tail leads to emission of high-energy phonons which carry away most of the energy pumped in by the injected current.Comment: Revised versio

Variational study of triangular lattice spin-1/2 model with ring exchanges and spin liquid state in \kappa-(ET)_2 Cu_2 (CN)_3

We study triangular lattice spin-1/2 system with antiferromagnetic Heisenberg and ring exchanges using variational approach focusing on possible realization of spin liquid states. Trial spin liquid wave functions are obtained by Gutzwiller projection of fermionic mean field states and their energetics is compared against magnetically ordered trial states. We find that in a range of the ring exchange coupling upon destroying the antiferromagnetic order, the best such spin liquid state is essentially a Gutzwiller-projected Fermi sea state. We propose this spin liquid with spinon Fermi surface as a candidate for the nonmagnetic insulating phase observed in the organic compound \kappa-(ET)_2 Cu_2 (CN)_3, and describe some experimental consequences of this proposal.Comment: 7 pages, 5 figure

Diffusion Thermopower at Even Denominator Fractions

We compute the electron diffusion thermopower at compressible Quantum Hall states corresponding to even denominator fractions in the framework of the composite fermion approach. It is shown that the deviation from the linear low temperature behavior of the termopower is dominated by the logarithmic temperature corrections to the conductivity and not to the thermoelectric coefficient, although such terms are present in both quantities. The enhanced magnitude of this effect compared to the zero field case may allow its observation with the existing experimental techniques.Comment: Latex, 12 pages, Nordita repor

The puzzle of 90 degree reorientation in the vortex lattice of borocarbide superconductors

We explain 90 degree reorientation in the vortex lattice of borocarbide superconductors on the basis of a phenomenological extension of the nonlocal London model that takes full account of the symmetry of the system. We propose microscopic mechanisms that could generate the correction terms and point out the important role of the superconducting gap anisotropy.Comment: 4 pages, 2 eps figure

Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory for small r_s.Comment: 4 pages ReVTeX, 4 ps figure

Weak localization in InSb thin films heavily doped with lead

The paper reports on the investigations of the weak localization (WL) effects in 3D polycrystalline thin films of InSb. The films are closely compensated showing the electron concentration n>10^{16} cm^{-3} at the total concentration of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless Pb-doped, the InSb films do not show any measurable or show very small WL effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18} cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly manifested SO scattering is observed. From the comparison of the experimental data on temperature dependence of the magnetoresistivity and sample resistance with the WL theory, the temperature dependence of the phase destroying time is determined. The determination is performed by fitting theoretical terms obtained from Kawabata's theory to experimental data on magnetoresistance. It is concluded that the dephasing process is connected to three separate interaction processes. The first is due to the SO scatterings and is characterized by temperature-independent relaxation time. The second is associated with the electron-phonon interaction. The third dephasing process is characterized by independent on temperature relaxation time tau_c. This relaxation time is tentatively ascribed to inelastic scattering at extended structural defects, like grain boundaries. The resulting time dephasing time shows saturation in its temperature dependence. The temperature dependence of the resistance of the InSb films can be explained by the electron-electron interaction for T2 K.Comment: 15 pages with 5 figure