Electrical Properties of the Layered Single Crystals TlGaSe2 and TlInS2

In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 – 300 K, the phase transitions at the temperatures of 240 – 245 K and 105 – 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples

Effect of Bor doping on charge - carriers thermal delocalization in ferroelectric - semiconductor TlInS2 / A. P. Odrinsky, M. H. Yu Seyidov, A. I. Nadjafov, V. B. Aliyeva

Дефектно-примесная инженерия. Радиационные эффекты в полупроводникахПредставлены результаты исследования центров локализации заряда (ЦЛ) легированного бором кристалла сегнетоэлектрика - полупроводника TlInS2 методом фотоэлектрической релаксационной спектроскопии (PICTS). Обсуждаются особенности регистрации термоделокализации носителей заряда в области температуры фазовых переходов (ФП), в сравнении с нелегированным кристаллом и TlInS2:La, и их связь с проявлением у TlInS2:B свойств релаксора.Results of charge localization centers (LC) investigation in the TlInS2 crystal of ferroelectric - semiconductor with boron dopant by photo-induced current transient spectroscopy (PICTS) technique are presented. Features of charge – carriers thermal delocalization registration in the temperature region of phase transitions (PT) are discussed with comparison to TlInS2:La and not doped crystals, and their connection with relaxor properties of TlInS2:B

Аномалии кинетики фотоотклика кристалла сегнетоэлектрика – полупроводника TlGaSe2

Белорусский республиканский фонд фундаментальных исследований

Electrical Properties of the Layered Single Crystals TlGaSe2 and TlInS2

In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 – 300 K, the phase transitions at the temperatures of 240 – 245 K and 105 – 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples