Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films

Ferroelectric Phase Transitions in Three-Component Short-Period Superlattices Studied by Ultraviolet Raman Spectroscopy

Vibrational spectra of three-component BaTiO3SrTiO3CaTiO3 short-period superlattices grown by pulsed laser deposition with atomic-layer control have been investigated by ultraviolet Raman spectroscopy. Monitoring the intensity of the first-order phonon peaks in Raman spectra as a function of temperature allowed determination of the ferroelectric phase transition temperature, Tc. Raman spectra indicate that all superlattices remain in the tetragonal ferroelectric phase with out-of-plane polarization in the entire temperature range below Tc. The dependence of Tc on the relative thicknesses of ferroelectric (BaTiO3) to non-ferroelectric materials (SrTiO3 and CaTiO3) has been studied. The highest Tc was found in superlattices having the largest relative amount of BaTiO3, provided that the superlattice maintains its coherency with the substrate. Strain relaxation leads to a significant decrease in the ferroelectric phase transition temperature

Friction on a single MoS2 nanotube

Friction was measured on a single molybdenum disulfide (MoS2) nanotube and on a single MoS2 nano-onion for the first time. We used atomic force microscopy (AFM) operating in ultra-high vacuum at room temperature. The average coefficient of friction between the AFM tip and MoS2 nanotubes was found considerably below the corresponding values obtained from an air-cleaved MoS2 single crystal or graphite. We revealed a nontrivial dependency of friction on interaction strength between the nanotube and the underlying substrate. Friction on detached or weakly supported nanotubes by the substrate was several times smaller (0.023 ± 0.005) than that on well-supported nanotubes (0.08 ± 0.02). We propose an explanation of a quarter of a century old phenomena of higher friction found for intracrystalline (0.06) than for intercrystalline slip (0.025) in MoS2. Friction test on a single MoS2 nano-onion revealed a combined gliding-rolling process

Raman Study of Oxygen Reduced and Re-Oxidized Strontium Titanate

We report Raman study of oxygen-reduced single crystal strontium titanate. Oxygen reduction leads to the appearance of the forbidden first order Raman peaks, as well as new spectral features attributed to the local vibrational modes associated with oxygen vacancies. This assignment is supported by ab initio calculations of phonon modes in SrTiO3 with introduced oxygen vacancies. Raman studies of re-oxidized samples show the same spectra as the initial single crystals. Comparison of Raman spectra of SrTiO3 thin films and reduced SrTiO3 single crystals demonstrates the importance of other factors such as polar grain boundaries in the lattice dynamical behavior of thin films

Novel Magnetic and Optical Properties of Sn\u3csub\u3e1−x\u3c/sub\u3eZn\u3csub\u3ex\u3c/sub\u3eO\u3csub\u3e2\u3c/sub\u3e Nanoparticles

In this work, we report on the effects of doping SnO2 nanoparticles with Zn2+ ions. A series of ∼2–3 nm sized Sn1−x ZnxO2 crystallite samples with 0 ≤ x ≤ 0.18 were synthesized using a forced hydrolysis method. Increasing dopant concentration caused systematic changes in the crystallite size, oxidation state of Sn, visible emission, and band gap of SnO2 nanoparticles. X-ray Diffraction studies confirmed the SnO2 phase purity and the absence of any impurity phases. Magnetic measurements at room temperature showed a weak ferromagnetic behavior characterized by an open hysteresis loop. Their saturation magnetization Ms increases initially with increasing Zn concentrations; however for x \u3e 0.06, Ms decreases. Samples with the highest Ms values (x = 0.06) were analyzed using an Inductively Coupled Plasma Mass Spectrometer, looking for traces of any magnetic elements in the samples. Concentrations of all transition metals (Fe, Co, Mn, Cr, and Ni) in these samples were below ppb level, suggesting that the observed magnetism is not due to random inclusions of any spurious magnetic impurities and it cannot be explained by the existing models of magnetic exchange. A new visible emission near 490 nm appeared in the Zn doped SnO2 samples in the photoluminescence spectra which strengthened as x increased, suggesting the formation of defects such as oxygen vacancies. X-ray Photoelectron Spectroscopy (XPS) confirmed the nominal Zn dopant concentrations and the 2+ oxidation state of Zn in the Sn1−x ZnxO2 samples. Interestingly, the XPS data indicated the presence of a small fraction of Sn2+ ions in Sn1−xZnxO2 samples in addition to the expected Sn4+, and the Sn2+ concentration increased with increasing x. The presence of multi-valent metal ions and oxygen defects in high surface area oxide nanoparticles has been proposed as a potential recipe for weak ferromagnetis

Ferroelectricity in Ultrathin Strained BaTiO\u3csub\u3e3\u3c/sub\u3e Films: Probing the Size Effect by Ultraviolet Raman Spectroscopy

We demonstrate a dramatic effect of film thickness on the ferroelectric phase transition temperature, Tc, in strained BaTiO3 films grown on SrTiO3 substrates. Using variable temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of of 180◦ domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness

A Raman study of the Charge-Density-Wave State in A0.3_{0.3}MoO3_3 (A = K,Rb)

We report a comparative Raman spectroscopic study of the quasi-one-dimensional charge-density-wave systems \ab (A = K, Rb). The temperature and polarization dependent experiments reveal charge-coupled vibrational Raman features. The strongly temperature-dependent collective amplitudon mode in both materials differ by about 3 cm, thus revealing the role of alkali atom. We discus the observed vibrational features in terms of charge-density-wave ground state accompanied by change in the crystal symmetry. A frequency-kink in some modes seen in \bb between T = 80 K and 100 K supports the first-order lock-in transition, unlike \rb. The unusually sharp Raman lines(limited by the instrumental response) at very low temperatures and their temperature evolution suggests that the decay of the low energy phonons is strongly influenced by the presence of the temperature dependent charge density wave gap.Comment: 13 pages, 7 figure

A low-dimensional spin S = 1/2 system at the quantum critical limit: Na2V2O7

We report the results of measurements of the dc-susceptibility and the 23Na-NMR response of Na2V2O7, a recently synthesized, non metallic low dimensional spin system. Our results indicate that upon reducing the temperature to below 100 K, the V^{4+} moments are gradually quenched, leaving only one moment out of 9 active. The NMR data reveal a phase transition at very low temperatures. With decreasing applied field H, the critical temperature shifts towards T = 0 K, suggesting that Na2V2O7 may be regarded as an insulator reaching a quantum critical point at H = 0.Comment: 4 pages, 5 figure