801 research outputs found
Modelling Load Balancing and Carrier Aggregation in Mobile Networks
In this paper, we study the performance of multicarrier mobile networks.
Specifically, we analyze the flow-level performance of two inter-carrier load
balancing schemes and the gain engendered by Carrier Aggregation (CA). CA is
one of the most important features of HSPA+ and LTE-A networks; it allows
devices to be served simultaneously by several carriers. We propose two load
balancing schemes, namely Join the Fastest Queue (JFQ) and Volume Balancing
(VB), that allow the traffic of CA and non-CA users to be distributed over the
aggregated carriers. We then evaluate the performance of these schemes by means
of analytical modeling. We show that the proposed schemes achieve quasi-ideal
load balancing. We also investigate the impact of mixing traffic of CA and
non-CA users in the same cell and show that performance is practically
insensitive to the traffic mix.Comment: 8 pages, 6 figures, submitted to WiOpt201
Spin Degree of Freedom in a Two-Dimensional Electron Liquid
We have investigated correlation between spin polarization and
magnetotransport in a high mobility silicon inversion layer which shows the
metal-insulator transition. Increase in the resistivity in a parallel magnetic
field reaches saturation at the critical field for the full polarization
evaluated from an analysis of low-field Shubnikov-de Haas oscillations. By
rotating the sample at various total strength of the magnetic field, we found
that the normal component of the magnetic field at minima in the diagonal
resistivity increases linearly with the concentration of ``spin-up'' electrons.Comment: 4 pages, RevTeX, 6 eps-figures, to appear in PR
Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers
We provide a possible theoretical explanation for the recently observed giant
positive magnetoresistance in high mobility low density {\it quasi}-two
dimensional electron and hole systems. Our explanation is based on the strong
coupling of the parallel field to the {\it orbital} motion arising from the
{\it finite} layer thickness and the large Fermi wavelength of the {\it
quasi}-two dimensional system at low carrier densities.Comment: 4 pages with 4 figures. Accepted for Publication in Physical Review
Letter
Classical versus Quantum Effects in the B=0 Conducting Phase in Two Dimensions
In the dilute two-dimensional electron system in silicon, we show that the
temperature below which Shubnikov-de Haas oscillations become apparent is
approximately the same as the temperature below which an exponential decrease
in resistance is seen in B=0, suggesting that the anomalous behavior in zero
field is observed only when the system is in a degenerate (quantum) state. The
temperature dependence of the resistance is found to be qualitatively similar
in B=0 and at integer Landau level filling factors.Comment: 3 pages, 3 figure
A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
We argue that there is a new liquid phase in the two-dimensional electron
system in Si MOSFETs at low enough electron densities. The recently observed
metal-insulator transition results as a crossover from the percolation
transition of the liquid phase through the disorder landscape in the system
below the liquid-gas critical temperature. The consequences of our theory are
discussed for variety of physical properties relevant to the recent
experiments.Comment: 12 pages of RevTeX with 3 postscript figure
Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))
In a recent Letter, Altshuler and Maslov propose a model which attributes the
anomalous temperature and field dependence of the resistivity of
two-dimensional electron (or hole) systems to the charging and discharging of
traps in the oxide (spacer), rather than to intrinsic behavior of interacting
particles associated with a conductor-insulator transition in two dimensions.
We argue against this model based on existing experimental evidence.Comment: 1 page; submitted to PR
Possible triplet superconductivity in MOSFETs
A theory that predicts a spin-triplet, even-parity superconducting ground
state in two-dimensional electron systems is re-analyzed in the light of recent
experiments showing a possible insulator-to-conductor transition in such
systems. It is shown that the observations are consistent with such an exotic
superconductivity mechanism, and predictions are made for experiments that
would further corroborate or refute this proposal.Comment: 4 pp., REVTeX, psfig, 1 eps fig, final version as publishe
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