Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF3, C3F6, and C3F6/H2, indicate that the reactor wall temperature is an important parameter in the etch process. Adequate temperature control can increase oxide etch selectivity over nitride and silicon. The loss of fluorocarbon species from the plasma to the walls is reduced as the wall temperature increased. The fluorocarbon deposition on a cooled substrate surface increases concomitantly, resulting in a more efficient suppression of silicon and nitride etch rates, whereas oxide etch rates remain nearly constant

Is reflection like soap?: a critical narrative umbrella review of approaches to reflection in medical education research

Reflection is a complex concept in medical education research. No consensus exists on what reflection exactly entails; thus far, cross-comparing empirical findings has not resulted in definite evidence on how to foster reflection. The concept is as slippery as soap. This leaves the research field with the question, ‘how can research approach the conceptual indeterminacy of reflection to produce knowledge?’. The authors conducted a critical narrative umbrella review of research on reflection in medical education. Forty-seven review studies on reflection research from 2000 onwards were reviewed. The authors used the foundational literature on reflection from Dewey and Schön as an analytical lens to identify and critically juxtapose common approaches in reflection research that tackle the conceptual complexity. Research on reflection must deal with the paradox that every conceptualization of reflection is either too sharp or too broad because it is entrenched in practice. The key to conceptualizing reflection lies in its use and purpose, which can be provided by in situ research of reflective practices

Is reflection like soap? a critical narrative umbrella review of approaches to reflection in medical education research

Reflection is a complex concept in medical education research. No consensus exists on what reflection exactly entails; thus far, cross-comparing empirical findings has not resulted in definite evidence on how to foster reflection. The concept is as slippery as soap. This leaves the research field with the question, ‘how can research approach the conceptual indeterminacy of reflection to produce knowledge?’. The authors conducted a critical narrative umbrella review of research on reflection in medical education. Forty-seven review studies on reflection research from 2000 onwards were reviewed. The authors used the foundational literature on reflection from Dewey and Schön as an analytical lens to identify and critically juxtapose common approaches in reflection research that tackle the conceptual complexity. Research on reflection must deal with the paradox that every conceptualization of reflection is either too sharp or too broad because it is entrenched in practice. The key to conceptualizing reflection lies in its use and purpose, which can be provided by in situ research of reflective practices

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF3, C3F6, and C3F6/H2, indicate that the reactor wall temperature is an important parameter in the etch process. Adequate temperature control can increase oxide etch selectivity over nitride and silicon. The loss of fluorocarbon species from the plasma to the walls is reduced as the wall temperature increased. The fluorocarbon deposition on a cooled substrate surface increases concomitantly, resulting in a more efficient suppression of silicon and nitride etch rates, whereas oxide etch rates remain nearly constant