Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Abstract Polyvinylpyrrolidone / Nickel oxide (PVP/NiO) dielectrics were fabricated with sol-gel method using 0.2 g of PVP at different working temperatures of 80, 150 and 200 ºC. Structural properties and surface morphology of the hybrid films were investigated by XRay diffraction (XRD) and Scanning Electron Microscope (SEM) respectively. Energy dispersive X-ray spectroscopy (EDX) was used to make a quantitative chemical analysis of an unknown material. The obtained results demonstrate the feasibility of using high dielectric constant nanocomposite PVP/NiO as gate dielectric insulator in the organic thin film transistors (OTFTs). JNS All rights reserve

Estimation of lattice strain in metallic oxide–organic material nanocomposite using Williamson-Hall equation

In the present work, metallic oxide–organic material hybrid nanocomposites (Poly vinyl pyrrolidone- zinc oxide, PVP-ZnO) have been synthesized using sol-gel method. Nanostructural properties of aforementioned materials were studied by scanning electron microscope (SEM) and X-ray diffraction techniques. Williamson equation was used to estimate lattice strain in the PVP-ZnO nanocomposite. The dominated peaks in XRD spectra and Williamson- Hall diagrams were considered and the nano crystallite strain was plotted by drawing strain slopes. The obtained results showed that hybrid nanocomposites synthesized at 150ºC have lower strain and therefore higher yield strain. The SEM image indicated that nanoparticles are distributed uniformly