Active multilayer mirrors for reflectance tuning at extreme ultraviolet (EUV) wavelengths

We propose an active multilayer mirror structure for EUV wavelengths which can be adjusted to compensate for reflectance changes. The multilayer structure tunes the reflectance via an integrated piezoelectric layer that can change its dimension due to an externally applied voltage. Here, we present design and optimization of the mirror structure for maximum reflectance tuning. In addition, we present preliminary results showing that the deposition of piezoelectric thin films with the requisite layer smoothness and crystal structure are possible. Finally, polarization switching of the smoothest piezoelectric film is presented

Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films

Detailed analysis of transport, magnetism and x-ray absorption spectroscopy measurements on ultrathin La0.7Sr0.3MnO3 films with thicknesses from 3 to 70 unit cells resulted in the identification of a lower critical thickness for a non-metallic, non-ferromagnetic layer at the interface with the SrTiO3 (001) substrate of only 3 unit cells (~12 Angstrom). Furthermore, linear dichroism measurements demonstrate the presence of a preferred (x2-y2) in-plane orbital ordering for all layer thicknesses without any orbital reconstruction at the interface. A crucial requirement for the accurate study of these ultrathin films is a controlled growth process, offering the coexistence of layer-by-layer growth and bulk-like magnetic/transport properties.Comment: 22 pages, 6 figures, accepted for publication in Physical Review

Determination of the spin-flip time in ferromagnetic SrRuO3 from time-resolved Kerr measurements

We report time-resolved Kerr effect measurements of magnetization dynamics in ferromagnetic SrRuO3. We observe that the demagnetization time slows substantially at temperatures within 15K of the Curie temperature, which is ~ 150K. We analyze the data with a phenomenological model that relates the demagnetization time to the spin flip time. In agreement with our observations the model yields a demagnetization time that is inversely proportional to T-Tc. We also make a direct comparison of the spin flip rate and the Gilbert damping coefficient showing that their ratio very close to kBTc, indicating a common origin for these phenomena

Admixtures to d-wave gap symmetry in untwinned YBa2Cu3O7 superconducting films measured by angle-resolved electron tunneling

We report on an \textit{ab}-anisotropy of $J_{c \parallel b}/J_{c \parallel a}$ and $I_{c}R_{n \parallel b}/I_{c}R_{n \parallel a}\cong 1.2$ in ramp-edge junctions between untwinned YBa$_{2}$Cu$_{3}$O$_{7}$ and $s$% -wave Nb. For these junctions, the angle $\theta$ with the YBa$_{2}$Cu$_{3}$O$_{7}$ crystal b-axis is varied as a single parameter. The $R_{n}$A($\theta$)-dependence presents 2-fold symmetry. The minima in $I_{c}R_{n}$ at $\theta \cong 50^{\circ}$ suggest a real s-wave subdominant component and negligible $d_{xy}$-wave or imaginary s-wave admixtures. The $I_{c}R_{n}$($\theta$)-dependence is well-fitted by 83% $d_{x^{2}-y^{2}}$-, 15% isotropic $s$- and 2% anisotropic s-wave order parameter symmetry, consistent with $\Delta_{b}/\Delta_{a} \cong 1.5$.Comment: 4 pages, 3 figures, to be published in Physical Review Letter

Electronically coupled complementary interfaces between perovskite band insulators

Perovskite oxides exhibit a plethora of exceptional electronic properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the two wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. In the latter case they are conceivably positively charged. For device applications, as well as for basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely-spaced complementary interfaces. Here we report the successful realization of such electronically coupled complementary interfaces in SrTiO3 - LaAlO3 thin film multilayer structures, in which the atomic stacking sequence at the interfaces was confirmed by quantitative transmission electron microscopy. We found a critical separation distance of 6 perovskite unit cell layers, corresponding to approximately 2.3 nm, below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate electron doped interfaces are found to be maintained in coupled structures down to sub-nanometer interface spacing