Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy

Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors.Comment: 14 pages, 7 figures, main text and appendi

Spectrally narrow exciton luminescence from monolayer MoS2 exfoliated onto epitaxially grown hexagonal BN

The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal boron nitride (hBN) encapsulation, which drastically reduces the inhomogeneous contribution to the exciton linewidth. Most studies use exfoliated hBN from high quality flakes grown under high pressure. In this work, we show that hBN grown by molecular beam epitaxy (MBE) over a large surface area substrate has a similarly positive impact on the optical emission from TMD MLs. We deposit MoS$_2$ and MoSe$_2$ MLs on ultrathin hBN films (few MLs thick) grown on Ni/MgO(111) by MBE. Then we cover them with exfoliated hBN to finally obtain an encapsulated sample : exfoliated hBN/TMD ML/MBE hBN. We observe an improved optical quality of our samples compared to TMD MLs exfoliated directly on SiO$_2$ substrates. Our results suggest that hBN grown by MBE could be used as a flat and charge free substrate for fabricating TMD-based heterostructures on a larger scale.Comment: 5 pages, 3 figure

Polarization Control of the Non-linear Emission on Semiconductor Microcavities

The degree of circular polarization ($\wp$) of the non-linear emission in semiconductor microcavities is controlled by changing the exciton-cavity detuning. The polariton relaxation towards \textbf{K} $\sim 0$ cavity-like states is governed by final-state stimulated scattering. The helicity of the emission is selected due to the lifting of the degeneracy of the $\pm 1$ spin levels at \textbf{K} $\sim 0$. At short times after a pulsed excitation $\wp$ reaches very large values, either positive or negative, as a result of stimulated scattering to the spin level of lowest energy ($+1/-1$ spin for positive/negative detuning).Comment: 8 pages, 3 eps figures, RevTeX, Physical Review Letters (accepted

Variation in the level of aggression, chemical and genetic distance among three supercolonies of the Argentine ant in Europe.

In their invasive ranges, Argentine ant populations often form one geographically vast supercolony, genetically and chemically uniform within which there is no intraspecific aggression. Here we present regional patterns of intraspecific aggression, cuticular hydrocarbons (CHCs) and population genetics of 18 nesting sites across Corsica and the French mainland. Aggression tests confirm the presence of a third European supercolony, the Corsican supercolony, which exhibits moderate to high levels of aggression, depending on nesting sites, with the Main supercolony, and invariably high levels of aggression with the Catalonian supercolony. The chemical analyses corroborated the behavioural data, with workers of the Corsican supercolony showing moderate differences in CHCs compared to workers of the European Main supercolony and strong differences compared to workers of the Catalonian supercolony. Interestingly, there were also clear genetic differences between workers of the Catalonian supercolony and the two other supercolonies at both nuclear and mitochondrial markers, but only very weak genetic differentiation between nesting sites of the Corsican and Main supercolonies (F(ST) = 0.06). A detailed comparison of the genetic composition of supercolonies also revealed that, if one of the last two supercolonies derived from the other, it is the Main supercolony that derived from the Corsican supercolony rather than the reverse. Overall, these findings highlight the importance of conducting more qualitative and quantitative analyses of the level of aggression between supercolonies, which has to be correlated with genetic and chemical data

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

An original time resolved cathodoluminescence set up has been used to investigate the optical properties and the carrier transport in quantum structures located in InGaAs/AlGaAs tetrahedral pyramids. An InGaAs quantum dot formed just below the top of the pyramid is connected to four types of low-dimensional barriers: InGaAs quantum wires on the edges of the pyramid, InGaAs quantum wells on the (111)A facets and segregated AlGaAs vertical quantum wire and AlGaAs vertical quantum wells formed at the centre and at the pyramid edges. Experiments were performed at a temperature of 92K, an accelerating voltage of 10kV and a beam probe current of 10pA. The cathodoluminescence spectrum shows five luminescence peaks. Rise and decay times for the different emission wavelengths provide a clear confirmation of the peak attribution (previously done with other techniques) to the different nanostructures grown in a pyramid. Moreover, experimental results suggest a scenario where carriers diffuse from the lateral quantum structures towards the central structures (the InGaAs quantum dot and the segregated AlGaAs vertical quantum wire) via the InGaAs quantum wires on the edges of the pyramid. According to this hypothesis, we have modeled the carrier diffusion along these quantum wires. An ambipolar carrier mobility of 1400cm2/V s allows to obtain a good fit to all temporal dependence

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $\Lambda_3$ and the conduction band $\Lambda_1$ (the E1 and E1 + $\Delta_1$ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of 10 \r{A}. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E1 and E1 + $\Delta_1$ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^-1 with a decrease in the thickness of the Ge layer from 10 to 6 \r{A} due to the spatial-confinement effect. The optimum thickness of the Ge layer, for which the size dispersion of quantum dots is minimum, is determined.Comment: 14 pages, 9 figure

Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.Comment: 5 pages, 2 figure

Magnetic field effect on polarization and dispersion of exciton-polaritons in planar microcavities

The non-local dielectric response theory is extended to describe oblique reflection of light from quantum wells subjected to the magnetic field. This allows us to calculate the dispersion and polarization of the exciton-polariton modes in semiconductor microcavities in the presence of a magnetic field normal to the plane of the structure. We show that due to the interplay between the exciton Zeeman splitting and TE-TM splitting of the photon modes, four polariton dispersion branches are formed with a polarization gradually changing from circular in the exciton-like part to linear in the photon-like part of each branch. Faraday rotation in quantum microcavities is shown to be strongly enhanced as compared with the rotation in quantum wells.Comment: 19 pages, 5 figure