Low temperature contacts through SixNy antireflection coatings for inverted a Si H c Si hetero contact solar cells

wafersusedinsolarcellproductionarebecomingthinner.Besides,anelectronicdegradationofthe SixNy c Si interfaceoccursatthesetemperaturesespeciallyiftheSixNy layerisdirectlydepositedonto high qualityabsorbersasonthefrontsideofa Si H c Sihetero contactsolarcellsofinvertedgeometry. The latterstructurehasbeenproposedasaneasyproduciblehigh efficiencysolarcell.Low temperature alternativessuchaslocalablationofSixNy with 355nmlaserradiationareexaminedwithregardtothe stabilityoftheelectronicqualityofpassivatedareasbetweentheopeningsintheSixNy layer. Contactlesstime resolvedmicrowaveconductivitymeasurements TRMC areappliedtomeasure changes inelectronicpassivationafterthesetreatments.Subsequentgalvanicmetallizationofthe openingsisoptimizedforitsuseasohmiccontact