Transverse Spin-Orbit Force in the Spin Hall Effect in Ballistic Semiconductor Wires

We introduce the spin and momentum dependent {\em force operator} which is defined by the Hamiltonian of a {\em clean} semiconductor quantum wire with homogeneous Rashba spin-orbit (SO) coupling attached to two ideal (i.e., free of spin and charge interactions) leads. Its expectation value in the spin-polarized electronic wave packet injected through the leads explains why the center of the packet gets deflected in the transverse direction. Moreover, the corresponding {\em spin density} will be dragged along the transverse direction to generate an out-of-plane spin accumulation of opposite signs on the lateral edges of the wire, as expected in the phenomenology of the spin Hall effect, when spin-$\uparrow$ and spin-$\downarrow$ polarized packets (mimicking the injection of conventional unpolarized charge current) propagate simultaneously through the wire. We also demonstrate that spin coherence of the injected spin-polarized wave packet will gradually diminish (thereby diminishing the ``force'') along the SO coupled wire due to the entanglement of spin and orbital degrees of freedom of a single electron, even in the absence of any impurity scattering.Comment: 5 pages, 4 color EPS figures; 2 new figures and expanded discussion on the sign of spin Hall quantities. To appear in Phys. Rev. B 72 (2005

Band structure and magnetotransport of a two-dimensional electron gas in the presence of spin-orbit interaction

The band structure and magnetotransport of a two-dimensional electron gas (2DEG), in the presence of the Rashba (RSOI) and Dresselhaus (DSOI) terms of the spin-orbit interaction and of a perpendicular magnetic field, is investigated. Exact and approximate analytical expressions for the band structure are obtained and used to calculate the density of states (DOS) and the longitudinal magnetoresitivity assuming a Gaussian type of level broadening. The interplay between the Zeeman coupling and the two terms of the SOI is discussed. If the strengths $\alpha$ and $\beta$, of the RSOI and DSOI, respectively, are equal and the $g$ factor vanishes, the two spin states are degenerate and a shifted Landau-level structure appears. With the increase of the difference $\alpha- \beta$, a novel beating pattern of the DOS and of the Shubnikov-de Haas (SdH) oscillations appears distinctly different from that occurring when one of these strengths vanishes

Spin relaxation in nn-type (111) GaAs quantum wells

We investigate the spin relaxation limited by the D'yakonov-Perel' mechanism in $n$-type (111) GaAs quantum wells, by means of the kinetic spin Bloch equation approach. In (111) GaAs quantum wells, the in-plane effective magnetic field from the D'yakonov-Perel' term can be suppressed to zero on a special momentum circle under the proper gate voltage, by the cancellation between the Dresselhaus and Rashba spin-orbit coupling terms. When the spin-polarized electrons mainly distribute around this special circle, the in-plane inhomogeneous broadening is small and the spin relaxation can be suppressed, especially for that along the growth direction of quantum well. This cancellation effect may cause a peak (the cancellation peak) in the density or temperature dependence of the spin relaxation time. In the density (temperature) dependence, the interplay between the cancellation peak and the ordinary density (Coulomb) peak leads to rich features of the density (temperature) dependence of the spin relaxation time. The effect of impurities, with its different weights on the cancellation peak and the Coulomb peak in the temperature dependence of the spin relaxation, is revealed. We also show the anisotropy of the spin relaxation with respect to the spin-polarization direction.Comment: 8 pages, 6 figure

Spin polarization decay in spin-1/2 and spin-3/2 systems

We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and characterize a wide range of qualitatively different regimes. For strong momentum scattering or slow spin precession we recover the D'yakonov-Perel result, according to which the spin relaxation time is inversely proportional to the momentum relaxation time. On the other hand, we find that, in the ballistic regime the carrier spin polarization shows a very different qualitative behavior. In systems with isotropic spin splitting the spin polarization can oscillate indefinitely, while in systems with anisotropic spin splitting the spin polarization is reduced by spin dephasing, which is non-exponential and may result in an incomplete decay of the spin polarization. For weak momentum scattering or fast spin precession, the oscillations or non-exponential spin dephasing are modulated by an exponential envelope proportional to the momentum relaxation time. Nevertheless, even in this case in certain systems a fraction of the spin polarization may survive at long times. Finally it is shown that, despite the qualitatively different nature of spin precession in the valence band, spin polarization decay in spin-3/2 hole systems has many similarities to its counterpart in spin-1/2 electron systems.Comment: 4 pages, 1 figure, to appear in Phys. Rev.

Decoherence of coupled electron spins via nuclear spin dynamics in quantum dots

In double quantum dots, the exchange interaction between two electron spins renormalizes the excitation energy of pair-flips in the nuclear spin bath, which in turn modifies the non-Markovian bath dynamics. As the energy renormalization varies with the Overhauser field mismatch between the quantum dots, the electron singlet-triplet decoherence resulting from the bath dynamics depends on sampling of nuclear spin states from an ensemble, leading to the transition from exponential decoherence in single-sample dynamics to power-law decay under ensemble averaging. In contrast, the decoherence of a single electron spin in one dot is essentially the same for different choices of the nuclear spin configuration.Comment: 4 pages 3 figure

Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors

We propose a mechanism to describe spin relaxation in n-doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore the proposed mechanism has to be included when describing spin relaxation in the impurity band.Comment: 4 page

Pauli blockade of the electron spin flip in bulk GaAs

By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of magnitude when the electron kinetic energy varies from 2 to 30 meV. At the high excitation densities and low temperatures of the reported experiments the main spin-flip mechanism of the conduction band electrons is the Bir-Aronov-Pikus. By means of Monte-Carlo simulations we evidence that phase-space filling effects result in the blocking of the spin flip, yielding an increase of t_sf with excitation density. These effects obtain values of t_sf up to 30 ns at k=0, the longest reported spin-relaxation time in undoped GaAs in the absence of a magnetic field.Comment: new author added, major changes in section IV (phenomenological model), minor changes throughout the entire manuscrip

Dynamical symmetry breaking as the origin of the zero-dcdc-resistance state in an acac-driven system

Under a strong $ac$ drive the zero-frequency linear response dissipative resistivity $\rho_{d}(j=0)$ of a homogeneous state is allowed to become negative. We show that such a state is absolutely unstable. The only time-independent state of a system with a $\rho_{d}(j=0)<0$ is characterized by a current which almost everywhere has a magnitude $j_{0}$ fixed by the condition that the nonlinear dissipative resistivity $\rho_{d}(j_{0}^{2})=0$. As a result, the dissipative component of the $dc$ electric field vanishes. The total current may be varied by rearranging the current pattern appropriately with the dissipative component of the $dc$-electric field remaining zero. This result, together with the calculation of Durst \emph{et. al.}, indicating the existence of regimes of applied $ac$ microwave field and $dc$ magnetic field where $\rho_{d}(j=0)<0$, explains the zero-resistance state observed by Mani \emph{et. al.} and Zudov \emph{et. al.}.Comment: Published versio

Triplet-singlet relaxation in semiconductor single and double quantum dots

We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing/anticrossing point in single quantum dots. The triplet/singlet relaxation in double quantum dots can be markedly changed by varying barrier height, inter-dot distance, external magnetic field and dot size.Comment: 7 pages, 4 figures, PRB in pres

Fulde-Ferrel-Larkin-Ovchinnikov Inhomogeneous Superconducting State and Phase Transitions Induced by Spin Accumulation in a Ferromagnet-dx2−y2 d_{x^{2}-y^{2}}-Wave Superconductor-Ferromagnet Tunnel Junction

Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) inhomogeneous superconducting (SC) state, first- and second-order phase transitions, and quantum criticality induced by spin accumulation in a ferromagnet-$d_{x^{2}-y^{2}}$-wave superconductor-ferromagnet tunnel junction are theoretically predicted. A complex phase diagram in the temperature-bias voltage plane is determined. It is found that the phase transitions from the homogeneous BCS state to the inhomogeneous FFLO state, and from the FFLO state with the momentum $\mathbf{q}$'s azimuthal angle $\theta_{\mathbf{q}}=0$ to that with $\theta_{\mathbf{q}}=\pi /4$, are of the first-order; while the transitions from all SC states to the normal state at critical voltages are of the second-order. A Lifshitz point, a bicritical point and a quantum critical point are identified.Comment: 5 pages, 5 figure