51 research outputs found

    Studies in molecular structure, symmetry and conformation VI. Crystal and molecular structure of 1-aminocyclopentane carboxylic acid monohydrate

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    1-aminocyclopentane carboxylic acid monohydrate is monoclinic: space group P 2 1 / c , a = 11·24, b = 6·27, c = 11·22 Å and β = 97·6 °. The crystal structure was solved by the symbolic addition method and refined to an R factor of 12·1%. The cyclopentane ring is disordered; one of the carbon atoms exists in two alternative sites, leading to two possible conformations both of which are of the envelope type.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/44835/1/10870_2005_Article_BF01245860.pd

    Crystal structure of L-threonyl-L-phenylalanine-p-nitrobenzyl ester hydrobromide

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    The crystal structure of L-threonyl-L-phenylalanine-p-nitrobenzyl ester hydrobromide, C20N3O6H24Br, has been determined using three-dimensional data. The crystals are orthorhombic with space group P212121 and a= 8.93±0.02; b=45.75±0.06 and c=5.05±0.03 Å. The final R value at the end of three-dimensional refinement is 0.089. A brief discussion of the backbone and side chain conformation is given. All five protons in the structure available for the formation of hydrogen bonds are utilized in forming a three-dimensional network of hydrogen bonds stabilizing the structure

    Retrospective study of factors affecting intrauterine insemination pregnancy outcome: The impact of male habits and working environment

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    Aims: This study is aimed at determining the prognostic factors influencing successful pregnancy following intrauterine insemination (IUI). Settings and design: Retrospective analysis. Materials and Methods: A total of 2123 cycles undergone by 871 couples during the period of 5 years (2011–2015) were retrospectively studied. Statistical Analysis Used: Each of the factors was compared with pregnancy outcome (PO) using statistical analysis with a confidence interval of 95% in SPSS software version 19. Chi-square test and logistic regression analysis method were used to determine the significance of each factor with the PO. Results: Among the various factors included in our study population, male habits (P = 0.004), male occupational environment (P = 0.025), male age (P = 0.002), and female age (P = 0.001) were found to significantly influence the PO following IUI. Conclusion: Our results indicate that avoiding smoking and alcohol consuming prior and during the IUI treatment along with working in low-heat-generating environment might lead to better success following the treatment

    Atomic layer deposition of wet-etch resistant silicon nitride using di(sec-butylamino) silane and N2 plasma on planar and 3D substrate topographies

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    The advent of three-dimensional (3D) finFET transistors and emergence of novel memory technologies place stringent requirements on the processing of silicon nitride (SiNx) films used for a variety of applications in device manufacturing. In many cases, a low temperature (<400 °C) deposition process is desired that yields high quality SiNx films that are etch resistant and also conformal when grown on 3D substrate topographies. In this work, we developed a novel plasma-enhanced atomic layer deposition (PEALD) process for SiNx using a mono-aminosilane precursor, Di(Sec-ButylAmino)Silane (DSBAS, SiH3N(sBu)2), and N2 plasma. Material properties have been analysed over a wide stage temperature range (100 – 500 °C) and compared with those obtained in our previous work for SiNx deposited using a bis-aminosilane precursor, Bis(Tert-ButylAmino)Silane (BTBAS, SiH2(NHtBu)2), and N2 plasma. Dense films (∼3.1 g/cm3) with low C, O and H contents at low substrate temperatures (<400 °C) were obtained on planar substrates for this process when compared to other processes reported in the literature. The developed process was also used for depositing SiNx films on high aspect ratio (4.5 : 1) 3D trench nanostructures to investigate film conformality and wet-etch resistance (in dilute hydrofluoric acid, HF : H2O = 1 : 100) relevant for state-of-the-art device architectures. Film conformality was below the desired levels of >95% and is attributed to the combined role played by nitrogen plasma soft saturation, radical species recombination and/or ion directionality during SiNx deposition on 3D substrates. Yet, very low wet-etch rates (WER ≤2 nm/min) were observed at the top, sidewall and bottom trench regions of the most conformal film deposited at low substrate temperature (<400 °C), confirming that the process is applicable for depositing high quality SiNx films on both planar and 3D substrate topographies
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