Properties and characterization of ALD grown dielectric oxides for MIS structures

We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.Comment: 8 pages, 5 figures, 14 reference

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator

The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist

Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells

We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the topological protection length (i.e. the distance on which the carriers in helical edge channels propagate without backscattering) is much shorter than the channel length, which is ~100 micrometers. The weak temperature dependence of the resistance and the presence of temperature dependent reproducible quasi-periodic resistance fluctuations can be qualitatively explained by the presence of charge puddles in the well, to which the electrons from the edge channels are tunnel-coupled.Comment: 8 pages, 4 figures, published versio

Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO

Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.Comment: 17 pages, 4 figures, 32 reference