31 research outputs found
Selective P2X7 receptor antagonists for chronic inflammation and pain
ATP, acting on P2X7 receptors, stimulates changes in intracellular calcium concentrations, maturation, and release of interleukin-1β (IL-1β), and following prolonged agonist exposure, cell death. The functional effects of P2X7 receptor activation facilitate several proinflammatory processes associated with arthritis. Within the nervous system, these proinflammatory processes may also contribute to the development and maintenance of chronic pain. Emerging data from genetic knockout studies have indicated specific roles for P2X7 receptors in inflammatory and neuropathic pain states. The discovery of multiple distinct chemical series of potent and highly selective P2X7 receptor antagonists have enhanced our understanding of P2X7 receptor pharmacology and the diverse array of P2X7 receptor signaling mechanisms. These antagonists have provided mechanistic insight into the role(s) P2X7 receptors play under pathophysiological conditions. In this review, we integrate the recent discoveries of novel P2X7 receptor-selective antagonists with a brief update on P2X7 receptor pharmacology and its therapeutic potential
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ON-BOARD FERRITE CORE MEMORIES WITH MEGABIT CAPACITY
International Telemetering Conference Proceedings / October 10-12, 1972 / International Hotel, Los Angeles, CaliforniaFor intermediate data storage in scientific satellites a ferrite core buffer memory with a capacity of 0.5 . . 2 Mbit was developed as a replacement of the hitherto used magnetic tape memories. For this memory a 3 D-organization with a pulse program especially adapted for buffer use was applied. For the realization of the access-circuitry multichip semiconductors in hermetically sealed flatpacks were combined with tantalum thin film resistor networks. A new small volume rugged memory stack was used. The cores used had an outer diameter of 0.5 mm. For this system a new flexible equipment practice is used which leads to a high component density. Furthermore, a 0.5 Mbit random access ferrite core memory was developed for the Helios satellite. This satellite will go into orbit in June 1974. The prototype model has a mass of 4.5 kg, overall dimensions of 194 x 210 x 207 mm, a volume of 7.08 W. (432 cu. inch) and has a power consumption of 2 Watts in stand-by and of 4.8 Watts at a bit rate of 16 kbit/s. It works satisfactorily within a temperature range of -45 to +75° C.International Foundation for TelemeteringProceedings from the International Telemetering Conference are made available by the International Foundation for Telemetering and the University of Arizona Libraries. Visit http://www.telemetry.org/index.php/contact-us if you have questions about items in this collection
HREM AND DIFFRACTION STUDIES OF AN Al2O3/Nb INTERFACE
Single crystals of Nb and Al2O3 were welded so that close-packed planes of both materials were parallel. Thin specimens (suitable for TEM) containing the interface were prepared out of the bulk bicrystal. The thickness of the foil was ~ 5 to 10 nm. HREM studies allowed the direct imaging of the interface. No pronounced intermediate layer (e.g., oxid, spinel) could be determined between the two constituents near the interface. Small deviations from the exact orientation of the interface are accomodated by facets. The diffraction pattern revealed pronounced streaks close to the diffraction spots of Nb. The shapes and positions of the streaks may allow the determination of the width of the distorted region
Neue Aufbau-, Verbindungs- und Verpackungstechniken fuer Hochgeschwindigkeitsschaltkreise Abschlussbericht
In the frame of this project new substrate, interconnection and packaging technologies were developed for high speed signal processing up to approximately 10 Gb/s. The following essential results were achieved: interconnection carrier with impedance controlled (z = 50 #OMEGA#), shielded triplate signal lines with conductor width of 100 #mu#m and space of 72 #mu#m with adhesive free semi-additive technology. Rectangular coaxial signal lines in planar technology. Typical RF-characteristics of triplate signal lines: attenuation 0,03dB/GHz.cm, cross talk < - 30 dB up to 6 GHz. Reflection free vias e.g. blind and buried vias up to 20 Gb/s. Demonstration of the superior signal processing capabilities of TAB assemblies; maximum data rate > 10 Gb/s. Optimised outer lead bonding for TAB components; recommended bonding parameters: for reflowed galvanic Pb/Sn surfaces 220 C/4 sec.; for screeen printed Pb/Sn surfaces 270 C/2 sec. Optimum thickness 20 #mu#m. Encapsulation of TAB-devices by use of commercially available encapsulation resins applied by dispensing. Reliability of TAB assemblies for telecom applications verified: 2000 h, 85/85 humidity/temperature storage, 1000 temperature cycles according to MIL 883C. Assessment of a testadaptor for test on tape with 84 SMA connectors for functional testing of ICs on TAB frames up to 7 Gb/s. Die attachment of TAB components with thermal conducting adhesive foil (8W/mk) at an application temperature of 150 C. Flux free die attachment with Sn/Pb/Bi preforms for applications T>280 C. Optimised thermal management of TAB assemblies; maximum power dissipation per die with forced convection of 3 m/s: 10,4 W for AIN heatsink, 13,7 W for Al heatsink. (orig.)SIGLEAvailable from TIB Hannover: F94B0348 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman
Neue Aufbau-, Verbindungs- und Verpackungstechniken fuer Hochgeschwindigkeitsschaltkreise Abschlussbericht
In the frame of this project new substrate, interconnection and packaging technologies were developed for high speed signal processing up to approximately 10 Gb/s. The following essential results were achieved: interconnection carrier with impedance controlled (z = 50 #OMEGA#), shielded triplate signal lines with conductor width of 100 #mu#m and space of 72 #mu#m with adhesive free semi-additive technology. Rectangular coaxial signal lines in planar technology. Typical RF-characteristics of triplate signal lines: attenuation 0,03dB/GHz.cm, cross talk < - 30 dB up to 6 GHz. Reflection free vias e.g. blind and buried vias up to 20 Gb/s. Demonstration of the superior signal processing capabilities of TAB assemblies; maximum data rate > 10 Gb/s. Optimised outer lead bonding for TAB components; recommended bonding parameters: for reflowed galvanic Pb/Sn surfaces 220 C/4 sec.; for screeen printed Pb/Sn surfaces 270 C/2 sec. Optimum thickness 20 #mu#m. Encapsulation of TAB-devices by use of commercially available encapsulation resins applied by dispensing. Reliability of TAB assemblies for telecom applications verified: 2000 h, 85/85 humidity/temperature storage, 1000 temperature cycles according to MIL 883C. Assessment of a testadaptor for test on tape with 84 SMA connectors for functional testing of ICs on TAB frames up to 7 Gb/s. Die attachment of TAB components with thermal conducting adhesive foil (8W/mk) at an application temperature of 150 C. Flux free die attachment with Sn/Pb/Bi preforms for applications T>280 C. Optimised thermal management of TAB assemblies; maximum power dissipation per die with forced convection of 3 m/s: 10,4 W for AIN heatsink, 13,7 W for Al heatsink. (orig.)SIGLEAvailable from TIB Hannover: F94B0348 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman