Investigation of the impact of neutron irradiation on SiC power MOSFETs lifetime by reliability tests

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were con-ducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence up to 2 × 1011 (n/cm2). Electrical characterization performed pre and post-irradiation on different part number of power devices (Si, SiC MOSFETs and IGBTs) which survived to neutron irradiation tests does not show alteration of the data-sheet electrical parameters due to neutron interaction with the device

DISC1 genetics, biology and psychiatric illness

Psychiatric disorders are highly heritable, and in many individuals likely arise from the combined effects of genes and the environment. A substantial body of evidence points towards DISC1 being one of the genes that influence risk of schizophrenia, bipolar disorder and depression, and functional studies of DISC1 consequently have the potential to reveal much about the pathways that lead to major mental illness. Here, we review the evidence that DISC1 influences disease risk through effects upon multiple critical pathways in the developing and adult brain

Les plateformes d’autopublication artistique en ligne : quatre figures de l’engagement des amateurs dans le web 2.0

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