6,509 research outputs found

    Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

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    This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.Comment: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title change

    Second Stage String Fragmentation Model

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    A string model, advocated by Bowler, provides a physical and intuitive picture of heavy quark fragmentation. When supplemented by an ad hoc factor of (1-z), to suppress fragmentation near z=1, it supplies an excellent fit to the data. We extend Bowler's model by accounting for the further decay of the massive mesonic states produced by the initial string breaking. We find that each subsequent string break and cascade decay beyond the first, introduces a factor of (1-z). Furthermore we find that including a finite mass for the quarks, which pop out of the vacuum and split the string, forces the first string breaking to produce massive states requiring further decay. This sequence terminates at the second stage of fragmentation where only relatively "light" heavy meson systems are formed. Thus we naturally account for the phenomenologically required factor of (1-z). We also predict that the ratio of (primary) fragments-vector/(vector plus scalar) should be .61. Our second stage string fragmentation model provides an appealing picture of heavy quark fragmentation.Comment: 15 page

    Light Neutralinos in B-Decays

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    We consider the decays of a BsB_s-meson into a pair of lightest supersymmetric particles (LSP) in the minimal supersymmetric standard model. It is found that the parameter space for light LSP's in the range of 1 GeV can be appreciably constrained by looking for such decays.Comment: 9 pages, LaTex, 2 figures (hard copies of the figures available from the Authors on request

    Note on Tests of the Factorization Hypothesis and the Determination of Meson Decay Constants

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    We discuss various tests of the factorization hypothesis making use of the close relationship between semi-leptonic and factorized nonleptonic decay amplitudes. It is pointed out that factorization leads to truely model-independent predictions for the ratio of nonleptonic to semi-leptonic decay rates, if in the nonleptonic decay a spin one meson of arbitrary mass or a pion take the place of the lepton pair. Where the decay constants of those mesons are known, these predictions represent ideal tests of the factorization hypothesis. In other cases they may be used to extract the decay constants. Currently available data on the decays Bˉ0D+π,D+π,D+ϱ,D+ϱ\bar B^0 \to D^+\pi^-,\, D^{*+}\pi^-,\, D^+\varrho^-,\, D^{*+}\varrho^- are shown to be in excellent agreement with the factorization results. A weighted average of the four independent values for the QCD coefficient a1a_1 extracted from the data gives a1=1.15±0.06a_1=1.15\pm 0.06 suggesting that it may be equal to the Wilson coefficient c1(μ)c_1(\mu) evaluated at the scale μ=mb\mu = m_b.Comment: (9 pages, ReVTeX, no figures), HD-THEP-92-3

    A double junction model of irradiated silicon pixel sensors for LHC

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    In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure

    Extraction of electric field in heavily irradiated silicon pixel sensors

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    A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.Comment: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth.

    Tests of silicon sensors for the CMS pixel detector

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    The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.Comment: Talk presented at 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, September 29-October 1, 2003, Firenze, Italy. Proceedings will be published in Nuclear Instr. & Methods in Phys. Research, Section
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