Shubnikov-de Haas oscillations spectrum of the strongly correlated quasi-2D organic metal (ET)8[Hg4Cl12(C6H5Br)]2 under pressure

Pressure dependence of the Shubnikov-de Haas (SdH) oscillations spectra of the quasi-two di- mensional organic metal (ET)8[Hg4Cl12(C6H5Br)]2 have been studied up to 1.1 GPa in pulsed magnetic fields of up to 54 T. According to band structure calculations, its Fermi surface can be regarded as a network of compensated orbits. The SdH spectra exhibit many Fourier components typical of such a network, most of them being forbidden in the framework of the semiclassical model. Their amplitude remains large in all the pressure range studied which likely rules out chemical potential oscillation as a dominant contribution to their origin, in agreement with recent calculations relevant to compensated Fermi liquids. In addition to a strong decrease of the magnetic breakdown field and effective masses, the latter being likely due to a reduction of the strength of electron correlations, a sizeable increase of the scattering rate is observed as the applied pressure increases. This latter point, which is at variance with data of most charge transfer salts is discussed in connection with pressure-induced features of the temperature dependence of the zero-field interlayer resistanceComment: Eur. Phys. J. B, in pres

Onsager phase factor of quantum oscillations in the organic metal theta-(BEDT-TTF)4CoBr4(C6H4Cl2)

De Haas-van Alphen oscillations are studied for Fermi surfaces illustrating the Pippard's model, commonly observed in multiband organic metals. Field- and temperature-dependent amplitude of the various Fourier components, linked to frequency combinations arising from magnetic breakdown between different bands, are considered. Emphasis is put on the Onsager phase factor of these components. It is demonstrated that, in addition to the usual Maslov index, field-dependent phase factors must be considered to precisely account for the data at high magnetic field. We present compelling evidence of the existence of such contributions for the organic metal theta-(BEDT-TTF)4CoBr4(C6H4Cl2)

Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for activated transport $\sigma_{\Box} = \sigma_{0}\exp(-W/k_{B}T)$, where $\sigma_{0}$ is a constant and $W$ depends on the gate voltage. The gate voltage dependence of the Hall coefficient shows that, unlike in conventional FETs, the effective mobility of dense hole carriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.Comment: 5 pages, 3 figure

Magnetic oscillations in a two-dimensional network of compensated electron and hole orbits

The FS of (ET)8Hg4Cl12(C6H5Br)2 can be regarded as a 2D network of compensated electron and hole orbits coupled by magnetic breakthrough. Simultaneous measurements of the interlayer magnetoresistance and magnetic torque have been performed up to 28 T. Magnetoresistance and de dHvA oscillations spectra exhibit frequency combinations typical of such a network. Even though some of the observed magnetoresistance oscillations cannot be interpreted on the basis of neither conventional SdH oscillations nor quantum interference, the temperature and magnetic field (both orientation and magnitude) dependence of all the Fourier components of the dHvA spectra can be consistently accounted for by the LK formula. This behaviour is at variance with that currently reported for compounds illustrating the linear chain of coupled orbits model.Comment: accepted for publication in europhysics Letter

Temperature- and pressure-dependent metallic states in (BEDT-TTF)8[Hg4Br12(C6H5Br)2]

Temperature-driven metal-insulator and pressure-driven insulator-metal transitions observed in(BEDT-TTF)8[Hg4X12(C6H5Y)2]] with X = Y = Br are studied through band structure calculations based on X-ray crystal structure determination and Shubnikov-de Haas (SdH) oscillations spectra, respectively. In connection with chemical pressure effect, the transition, which is not observed for X = Cl, is due to gap opening linked to structural changes as the temperature decreases. Even though many body interactions can be inferred from the pressure dependence of the SdH oscillations spectra, all the data can be described within a Fermi liquid picture