Electron-doped phosphorene: A potential monolayer superconductor

We predict by first-principles calculations that the electron-doped phosphorene is a potential BCS-like superconductor. The stretching modes at the Brillouin-zone center are remarkably softened by the electron-doping, which results in the strong electron-phonon coupling. The superconductivity can be introduced by a doped electron density ($n_{2D}$) above $1.3 \times10^{14}$ cm$^{-2}$, and may exist over the liquid helium temperature when $n_{2D}>2.6 \times10^{14}$ cm$^{-2}$. The maximum critical temperature is predicted to be higher than 10 K. The superconductivity of phosphorene will significantly broaden the applications of this novel material

Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility

Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C) and high (>600 deg. C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature.Comment: 30 pages, 11 figure

Symmetry breaking and manipulation of nonlinear optical modes in an asymmetric double-channel waveguide

We study light-beam propagation in a nonlinear coupler with an asymmetric double-channel waveguide and derive various analytical forms of optical modes. The results show that the symmetry-preserving modes in a symmetric double-channel waveguide are deformed due to the asymmetry of the two-channel waveguide, yet such a coupler supports the symmetry-breaking modes. The dispersion relations reveal that the system with self-focusing nonlinear response supports the degenerate modes, while for self-defocusingmedium the degenerate modes do not exist. Furthermore, nonlinear manipulation is investigated by launching optical modes supported in double-channel waveguide into a nonlinear uniform medium.Comment: 10 page

Doping dependent evolution of magnetism and superconductivity in Eu1-xKxFe2As2 (x = 0-1) and temperature dependence of lower critical field Hc1

We have synthesized the polycrystalline samples of Eu1-xKxFe2As2 (x = 0-1) and carried out systematic characterization using x-ray diffraction, ac & dc magnetic susceptibility, and electrical resistivity measurements. We have seen a clear signature of the coexistence of superconducting transition (Tc = 5.5 K) with SDW ordering in our under doped sample viz. x = 0.15. The spin density wave transition observed in EuFe2As2 get completely suppressed at x = 0.3 and superconductivity arises below 20 K. Superconducting transition temperature Tc increases with increase in K content and a maximum Tc = 33 K is reached for x = 0.5, beyond which it decreases again. The doping dependent T(x) phase diagram is extracted from the magnetic and electrical transport data. It is found that magnetic ordering of Eu-moments coexists with superconductivity up to x = 0.6. The isothermal magnetization data taken at 2 K for the doped samples suggest 2+ valence states of Eu ions. We also present the temperature dependence of the lower critical field Hc1 of superconducting polycrystalline samples. The value of Hc1(0) obtained for x = 0.3, 0.5, and 0.7 after taking the demagnetization factor into account is 248, 385, and 250 Oe, respectively. The London penetration depth {\lambda}(T) calculated from the lower critical field does not show exponential behaviour at low temperature, as would be expected for a fully gapped clean s-wave superconductor. In contrast, it shows a T2 power-law feature down to T = 0.4 Tc, as observed in Ba1-xKxFe2As2 and BaFe2-xCoxAs2.Comment: 17 pages, 10 figure