13,267 research outputs found
Electron-doped phosphorene: A potential monolayer superconductor
We predict by first-principles calculations that the electron-doped
phosphorene is a potential BCS-like superconductor. The stretching modes at the
Brillouin-zone center are remarkably softened by the electron-doping, which
results in the strong electron-phonon coupling. The superconductivity can be
introduced by a doped electron density () above
cm, and may exist over the liquid helium temperature when cm. The maximum critical temperature is predicted to be
higher than 10 K. The superconductivity of phosphorene will significantly
broaden the applications of this novel material
Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by
ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered.
Difference in nucleation of quantum dots during Ge deposition at low (<600 deg
C) and high (>600 deg. C) temperatures is studied by high resolution scanning
tunneling microscopy. The atomic models of growth of both species of Ge
huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at
low temperatures is explored. A problem of lowering of the array formation
temperature is discussed with the focus on CMOS compatibility of the entire
process; a special attention is paid upon approaches to reduction of treatment
temperature during the Si(001) surface pre-growth cleaning, which is at once a
key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array
formation process. The temperature of the Si clean surface preparation, the
final high-temperature step of which is, as a rule, carried out directly in the
MBE chamber just before the structure deposition, determines the compatibility
of formation process of Ge-QD-array based devices with the CMOS manufacturing
cycle. Silicon surface hydrogenation at the final stage of its wet chemical
etching during the preliminary cleaning is proposed as a possible way of
efficient reduction of the Si wafer pre-growth annealing temperature.Comment: 30 pages, 11 figure
Symmetry breaking and manipulation of nonlinear optical modes in an asymmetric double-channel waveguide
We study light-beam propagation in a nonlinear coupler with an asymmetric
double-channel waveguide and derive various analytical forms of optical modes.
The results show that the symmetry-preserving modes in a symmetric
double-channel waveguide are deformed due to the asymmetry of the two-channel
waveguide, yet such a coupler supports the symmetry-breaking modes. The
dispersion relations reveal that the system with self-focusing nonlinear
response supports the degenerate modes, while for self-defocusingmedium the
degenerate modes do not exist. Furthermore, nonlinear manipulation is
investigated by launching optical modes supported in double-channel waveguide
into a nonlinear uniform medium.Comment: 10 page
Doping dependent evolution of magnetism and superconductivity in Eu1-xKxFe2As2 (x = 0-1) and temperature dependence of lower critical field Hc1
We have synthesized the polycrystalline samples of Eu1-xKxFe2As2 (x = 0-1)
and carried out systematic characterization using x-ray diffraction, ac & dc
magnetic susceptibility, and electrical resistivity measurements. We have seen
a clear signature of the coexistence of superconducting transition (Tc = 5.5 K)
with SDW ordering in our under doped sample viz. x = 0.15. The spin density
wave transition observed in EuFe2As2 get completely suppressed at x = 0.3 and
superconductivity arises below 20 K. Superconducting transition temperature Tc
increases with increase in K content and a maximum Tc = 33 K is reached for x =
0.5, beyond which it decreases again. The doping dependent T(x) phase diagram
is extracted from the magnetic and electrical transport data. It is found that
magnetic ordering of Eu-moments coexists with superconductivity up to x = 0.6.
The isothermal magnetization data taken at 2 K for the doped samples suggest 2+
valence states of Eu ions. We also present the temperature dependence of the
lower critical field Hc1 of superconducting polycrystalline samples. The value
of Hc1(0) obtained for x = 0.3, 0.5, and 0.7 after taking the demagnetization
factor into account is 248, 385, and 250 Oe, respectively. The London
penetration depth {\lambda}(T) calculated from the lower critical field does
not show exponential behaviour at low temperature, as would be expected for a
fully gapped clean s-wave superconductor. In contrast, it shows a T2 power-law
feature down to T = 0.4 Tc, as observed in Ba1-xKxFe2As2 and BaFe2-xCoxAs2.Comment: 17 pages, 10 figure
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