Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures

The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting cases of low and high temperatures. Here we extend the theory to give an accurate description of the intermediate regime which is often relevant for room temperature experiments. Employing the self-consistent multiband envelope function approach, we determine the spin splitting of electron subbands in n-(001) zinc blende semiconductor quantum structures. Using these results we calculate spin relaxation rates as a function of temperature and obtain excellent agreement with experimental data.Comment: 9 pages, 4 figure

Phonon Driven Nonlinear Electrical Behavior in Molecular Devices

Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy scales. Nonlinear electrical features emerge from the calculated current-voltage characteristics. The quantum corrections with respect to the adiabatic limit characterize the transport scenario, and the polaronic reduction of the effective device-lead coupling plays a fundamental role in the unusual electrical features.Comment: 14 pages, 4 figure

Interaction-induced chaos in a two-electron quantum-dot system

A quasi-one-dimensional quantum dot containing two interacting electrons is analyzed in search of signatures of chaos. The two-electron energy spectrum is obtained by diagonalization of the Hamiltonian including the exact Coulomb interaction. We find that the level-spacing fluctuations follow closely a Wigner-Dyson distribution, which indicates the emergence of quantum signatures of chaos due to the Coulomb interaction in an otherwise non-chaotic system. In general, the Poincar\'e maps of a classical analog of this quantum mechanical problem can exhibit a mixed classical dynamics. However, for the range of energies involved in the present system, the dynamics is strongly chaotic, aside from small regular regions. The system we study models a realistic semiconductor nanostructure, with electronic parameters typical of gallium arsenide.Comment: 4 pages, 3ps figure

Decoherence due to contacts in ballistic nanostructures

The active region of a ballistic nanostructure is an open quantum-mechanical system, whose nonunitary evolution (decoherence) towards a nonequilibrium steady state is determined by carrier injection from the contacts. The purpose of this paper is to provide a simple theoretical description of the contact-induced decoherence in ballistic nanostructures, which is established within the framework of the open systems theory. The active region's evolution in the presence of contacts is generally non-Markovian. However, if the contacts' energy relaxation due to electron-electron scattering is sufficiently fast, then the contacts can be considered memoryless on timescales coarsened over their energy relaxation time, and the evolution of the current-limiting active region can be considered Markovian. Therefore, we first derive a general Markovian map in the presence of a memoryless environment, by coarse-graining the exact short-time non-Markovian dynamics of an abstract open system over the environment memory-loss time, and we give the requirements for the validity of this map. We then introduce a model contact-active region interaction that describes carrier injection from the contacts for a generic two-terminal ballistic nanostructure. Starting from this model interaction and using the Markovian dynamics derived by coarse-graining over the effective memory-loss time of the contacts, we derive the formulas for the nonequilibrium steady-state distribution functions of the forward and backward propagating states in the nanostructure's active region. On the example of a double-barrier tunneling structure, the present approach yields an I-V curve with all the prominent resonant features. The relationship to the Landauer-B\"{u}ttiker formalism is also discussed, as well as the inclusion of scattering.Comment: Published versio

Universality in Systems with Power-Law Memory and Fractional Dynamics

There are a few different ways to extend regular nonlinear dynamical systems by introducing power-law memory or considering fractional differential/difference equations instead of integer ones. This extension allows the introduction of families of nonlinear dynamical systems converging to regular systems in the case of an integer power-law memory or an integer order of derivatives/differences. The examples considered in this review include the logistic family of maps (converging in the case of the first order difference to the regular logistic map), the universal family of maps, and the standard family of maps (the latter two converging, in the case of the second difference, to the regular universal and standard maps). Correspondingly, the phenomenon of transition to chaos through a period doubling cascade of bifurcations in regular nonlinear systems, known as "universality", can be extended to fractional maps, which are maps with power-/asymptotically power-law memory. The new features of universality, including cascades of bifurcations on single trajectories, which appear in fractional (with memory) nonlinear dynamical systems are the main subject of this review.Comment: 23 pages 7 Figures, to appear Oct 28 201

Thermoelectric properties of the bismuth telluride nanowires in the constant-relaxation-time approximation

Electronic structure of bismuth telluride nanowires with the growth directions [110] and [015] is studied in the framework of anisotropic effective mass method using the parabolic band approximation. The components of the electron and hole effective mass tensor for six valleys are calculated for both growth directions. For a square nanowire, in the temperature range from 77 K to 500 K, the dependence of the Seebeck coefficient, the electron thermal and electrical conductivity as well as the figure of merit ZT on the nanowire thickness and on the excess hole concentration are investigated in the constant-relaxation-time approximation. The carrier confinement is shown to play essential role for square nanowires with thickness less than 30 nm. The confinement decreases both the carrier concentration and the thermal conductivity but increases the maximum value of Seebeck coefficient in contrast to the excess holes (impurities). The confinement effect is stronger for the direction [015] than for the direction [110] due to the carrier mass difference for these directions. The carrier confinement increases maximum value of ZT and shifts it towards high temperatures. For the p-type bismuth telluride nanowires with growth direction [110], the maximum value of the figure of merit is equal to 1.3, 1.6, and 2.8, correspondingly, at temperatures 310 K, 390 K, 480 K and the nanowire thicknesses 30 nm, 15 nm, and 7 nm. At the room temperature, the figure of merit equals 1.2, 1.3, and 1.7, respectively.Comment: 13 pages, 7 figures, 2 tables, typos added, added references for sections 2-

Combinatorial approach to identify electronically cloaked hollow nanoparticles

The possibility of designing core-shell nanoparticles that are “invisible” to the conduction electrons has been demonstrated recently. A total scattering cross section smaller than 0.01% of the physical cross section was demonstrated by artificially adjusting the parameters of the barrier and the well in a core-shell geometry. In this paper, we aim to extend the developed concept and find realistic material combinations that satisfy the cloaking criteria. We report designs of hollow nanoparticles that could be used to realize the cloaking concept in III–V semiconductor host matrices. Such particles could be used in advanced materials design to enhance and tune the electrical and the thermoelectric properties of a given host matrix. This paper may also contribute to defect engineering by coating defect sites with a proper cloaking layer.United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-FG02-09ER46577

Microbial U isotope fractionation depends on U(VI) reduction rate

U isotope fractionation may serve as an accurate proxy for U(VI) reduction in both modern and ancient environments, if the systematic controls on the magnitude of fractionation (ε) are known. We model the effect of U(VI) reduction kinetics on U isotopic fractionation during U(VI) reduction by a novel Shewanella isolate, Shewanella sp. (NR), in batch incubations. The measured ε values range from 0.96 ± 0.16 to 0.36 ± 0.07‰ and are strongly dependent on the U(VI) reduction rate. The ε decreases with increasing reduction rate constants normalized by cell density and initial U(VI). Reactive transport simulations suggest that the rate dependence of ε is due to a two-step process, where diffusive transport of U(VI) from the bulk solution across a boundary layer is followed by enzymatic reduction. Our results imply that the spatial decoupling of bulk U(VI) solution and enzymatic reduction should be taken into account for interpreting U isotope data from the environment

Silicon-based molecular electronics

Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk silicon bandstructure with a first-principles description of the molecular chemistry and its bonding with silicon. Using this method, we demonstrate that the presence of a semiconducting band-edge can lead to a novel molecular resonant tunneling diode (RTD) that shows negative differential resistance (NDR) when the molecular levels are driven by an STM potential into the semiconducting band-gap. The peaks appear for positive bias on a p-doped and negative for an n-doped substrate. Charging in these devices is compromised by the RTD action, allowing possible identification of several molecular highest occupied (HOMO) and lowest unoccupied (LUMO) levels. Recent experiments by Hersam et al. [1] support our theoretical predictions.Comment: Author list is reverse alphabetical. All authors contributed equally. Email: rakshit/liangg/ ghosha/[email protected]