Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices

Utilizing antiguided structures in VCSEL-based 2-D active photonic lattices enables single-mode operation with larger apertures

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Phase-locked laser arrays revisited

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Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

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High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers

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The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

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Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

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High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

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Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers

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