CP Violation in Predictive Neutrino Mass Structures

We study the CP violation effects from two types of neutrino mass matrices with (i) $(M_\nu)_{ee}=0$, and (ii) $(M_\nu)_{ee}=(M_\nu)_{e\mu}=0$, which can be realized by the high dimensional lepton number violating operators $\bar \ell_R^c\gamma^\mu L_L (D_\mu \Phi)\Phi^2$ and $\bar \ell_R^c l_R (D_\mu{\Phi})^2\Phi^2$, respectively. In (i), the neutrino mass spectrum is in the normal ordering with the lightest neutrino mass within the range $0.002\,{\rm eV}\lesssim m_0\lesssim 0.007\,{\rm eV}$. Furthermore, for a given value of $m_0$, there are two solutions for the two Majorana phases $\alpha_{21}$ and $\alpha_{31}$, whereas the Dirac phase $\delta$ is arbitrary. For (ii), the parameters of $m_0$, $\delta$, $\alpha_{21}$, and $\alpha_{31}$ can be completely determined. We calculate the CP violating asymmetries in neutrino-antineutrino oscillations for both mass textures of (i) and (ii), which are closely related to the CP violating Majorana phases.Comment: 17 pages, 4 figures, revised version accepted by EPJ

X-ray Line from the Dark Transition Electric Dipole

We study a two-component dark matter (DM) model in which the two Majorana fermionic DM components with nearly degenerate masses are stabilized by an $Z_2$ symmetry and interact with the right-handed muon and tau only via real Yukawa couplings, together with an additional $Z_2$-odd singly-charged scalar. In this setup, the decay from the heavy DM to the lighter one via the transition electric dipole yields the 3.55 keV X-ray signal observed recently. The Yukawa couplings in the dark sector are assumed to be hierarchical, so that the observed DM relic abundance can be achieved with the leading s-wave amplitudes without a fine-tuning. We also consider the constraints from flavor physics, DM direct detections and collider searches, respectively.Comment: 16 pages, 4 figures, revised version accepted for publication in JHE

High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics

High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vapor deposition at low temperature (325 °C) and pressure (30 Torr), using dimethylzinc and hydrogen selenide. All layers were unintentionally doped n type with net carrier concentrations of 6.4×10^(14)–1.5×10^(16) cm^(−3) and exhibited very high mobility at room temperature (up to 500 cm2/V s) as well as at 77 K, where the measured value of 9250 cm^2/V s is the highest so far reported for vapor phase growth. Additional evidence for the high quality of the material is provided by photoluminescence. Experimental results indicate a correlation between the photoluminescence characteristics and the electrical properties that may be useful in assessing the quality of ZnSe films