Nanostructures Technology, Research, and Applications

Contains reports on twenty-four research projects and a list of publications.Joint Services Electronics Program Grant DAAHO4-95-1-0038Defense Advanced Research Projects Agency/Semiconductor Research Corporation SA1645-25508PGU.S. Army Research Office Grant DAAHO4-95-1-0564Defense Advanced Research Projects Agency/U.S. Navy - Naval Air Systems Command Contract N00019-95-K-0131Suss Advanced Lithography P. O. 51668National Aeronautics and Space Administration Contract NAS8-38249National Aeronautics and Space Administration Grant NAGW-2003Defense Advanced Research Projects Agency/U.S. Army Research Office Grant DAAHO4-951-05643M CorporationDefense Advanced Research Projects Agency/U.S. Navy - Office of Naval Research Contract N66001-97-1-8909National Science Foundation Graduate FellowshipU.S. Army Research Office Contract DAAHO4-94-G-0377National Science Foundation Contract DMR-940034National Science Foundation Grant DMR 94-00334Defense Advanced Research Projects Agency/U.S. Air Force - Office of Scientific Research Contract F49620-96-1-0126Harvard-Smithsonian Astrophysical Observatory Contract SV630304National Aeronautics and Space Administration Grant NAG5-5105Los Alamos National Laboratory Contract E57800017-9GSouthwest Research Institute Contract 83832MIT Lincoln Laboratory Advanced Concepts ProgramMIT Lincoln Laboratory Contract BX-655

Nanostructures, Technology, Research, and Applications

Contains reports on twenty research projects and a list of publications.Joint Services Electronics Program Grant DAAH04-95-1-0038National Science Foundation Grant ECS-94-07078Semiconductor Research CorporationU.S. Army Research Office Grant DAAH04-95-1-0564Defense Advanced Research Projects Agency/Naval Air Systems Command Contract N00019-95-K-0131National Aeronautics and Space Administration Contract NAS8-38249National Aeronautics and Space Administration Grant NAGW-2003IBM Corporation Contract 1622National Science Foundation Graduate FellowshipU.S. Navy - Office of Naval Research Grant N00014-95-1-1297U.S. Army Research Office Contract DAAH04-94-G-0377U.S. Air Force - Office of Scientific Research Grant F49620-92-J-0064U.S. Air Force - Office of Scientific Research Grant F49620-95-1-0311National Science Foundation Contract DMR 94-0034U.S. Air Force - Office of Scientific Research Contract F49620-96-0126Harvard-Smithsonian Astrophysical Observatory Contract SV630304National Aeronautics and Space Administration Grant NAG5-5105Los Alamos National Laboratory Contract E57800017-9

Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET) is demonstrated on a n-doped GaAs channel with atomic-layer deposited Al2O3 as the gate oxide. The 10 mu m gate length transistor has a maximum drain current of 88 mA/mm and a transconductance of 19 mS/mm. The surface mobility estimated from the accumulation drain current has a peak value of similar to 500 cm(2)/Vs, which is comparable with those from previously reported depletion-mode GaAs MOSFETs epitaxially grown on semi-insulating GaAs substrates

A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric

10.1063/1.2431464Applied Physics Letters902-APPL

Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric

10.1063/1.2191468Applied Physics Letters8814-APPL

Investigation of electrical properties of furnace grown gate oxide on strained-Si

10.1016/j.tsf.2004.05.028Thin Solid Films462-463SPEC. ISS.85-89THSF

Device Physics and Performance Potential of III-V Field-Effect Transistors

The device physics and technology issues for III-V transistors are examined from a simulation perspective. To examine device physics, an InGaAs HEMT structure similar to those being explored experimentally is analyzed. The physics of this device is explored using detailed, quantum mechanical simulations based on the non-equilibrium Green’s function formalism. In this chapter, we: (1) elucidate the essential physics of III-V HEMTs, (2) identify key technology challenges that need to be addressed, and (3) estimate the expected performance advantage for III-V transistors