Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

The temperature dependence of current gain was investigated for AlGaAs/GaAs heterostructure-emitter bipolar transistors (HEBT). The current gain of the HEBT was found much less sensitive to temperature variation than that of a heterojunction bipolar transistor. In particular, the HEBT current gain was more or less constant with increasing temperature at the high current regime, indicating great potentials for power applications.published_or_final_versio

A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

A low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.published_or_final_versio

Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation

Quality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N2O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density Dit-m and smaller stress-induced Dit-m increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover, LN2ON oxide shows further improved Si/SiO2 interface due to interfacial nitrogen incorporation. © 1997 American Institute of Physics.published_or_final_versio

Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors

The temperature effect on current gain is presented for GalnP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 °C and decreases slightly at temperatures above 150 °C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices. © 1999 IEEE Publisher Item Identifier S 0018-9383(99)00257-9.published_or_final_versio

Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3 × 1020 and 2 × 1020 cm-3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.published_or_final_versio

Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene

In this work, the behaviors of the trichloroethylene (TCE) thermal oxidation of 6H silicon carbide (SiC) are investigated. The oxide growth of 6H SiC under different TCE concentrations (ratios of TCE to O2) follows the linear-parabolic oxidation law derived for silicon oxidation by Deal and Grove, J. Appl. Phys., 36 (1965). The oxidation rate with TCE is much higher than that without TCE and strongly depends on the TCE ratio in addition to oxidation temperature and oxidation time. The increase in oxidation rate induced by TCE is between 2.7 and 67% for a TCE ratio of 0.001-0.2 and a temperature of 1000-1150°C. Generally, the oxidation rate increases quickly with the TCE ratio for a TCE ratio less than 0.05 and then gradually saturates for a ratio larger than 0.05. The activation energy EB/A of the TCE oxidation for the TCE ratio range of 0.001-0.2 is 1.04-1.05 eV, which is a little larger than the 1.02 eV of dry oxidation. A two-step model for the TCE oxidation is also proposed to explain the experimental results. The model points out that in the SiC oxidation with TCE, the products (H2O and Cl2) of the reaction between TCE and O2 can speed up the oxidation, and hence, the oxidation rate is highly sensitive to the TCE ratio. © 2005 The Electrochemical Society. All rights reserved.published_or_final_versio

Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's

Correlation between created interface states and GIDL current increase in n-MOSFET's during hot-carrier stress is quantitatively discussed. A trap-assisted two-step tunneling model is used to relate the increased interface-state density (ADH) with the shift in GIDL current (ΔI d). Results show that under appropriate drain-gate biases, the two-step tunneling is so dominant that A/d is insensitive to temperatures up to about 50 °C. With the help of 2-D device simulation, the locations of the drain region with significant two-step tunneling and the energy levels of the traps involved can be found, with both depending on the drain voltage. From these insights on ADit,A/d and their relation, A Du near the midgap can be estimated, with an error less than 10% as compared to the results of chargepumping measurement on the same transistors. Devices with nitrided gate oxide, different gate-oxide thicknesses and different channel dimensions are also tested to verify the above correlation. © 1998 IEEE.published_or_final_versio

Perspectives on the Trypanosoma cruzi-host cell receptor interaction

Chagas disease is caused by the parasite Trypanosoma cruzi. The critical initial event is the interaction of the trypomastigote form of the parasite with host receptors. This review highlights recent observations concerning these interactions. Some of the key receptors considered are those for thromboxane, bradykinin, and for the nerve growth factor TrKA. Other important receptors such as galectin-3, thrombospondin, and laminin are also discussed. Investigation into the molecular biology and cell biology of host receptors for T. cruzi may provide novel therapeutic targets

Multimodality Treatment with Conventional Transcatheter Arterial Chemoembolization and Radiofrequency Ablation for Unresectable Hepatocellular Carcinoma

Background/Aims: To evaluate the efficacy of multimodality treatment consisting of conventional transcatheter arterial chemoembolization (TACE) and radiofrequency ablation (RFA) in patients with non-resectable and non-ablatable hepatocellular carcinoma (HCC). Methods: In this retrospective study, 85 consecutive patients with HCC (59 solitary, 29 multifocal HCC) received TACE followed by RFA between 2001 and 2010. The mean number of tumors per patient was 1.6 +/- 0.7 with a mean size of 3.0 +/- 0.9 cm. Both local efficacy and patient survival were evaluated. Results: Of 120 treated HCCs, 99 (82.5%) showed a complete response (CR), while in 21 HCCs (17.5%) a partial response was depicted. Patients with solitary HCC revealed CR in 91% (51/56); in patients with multifocal HCC (n = 29) CR was achieved in 75% (48 of 64 HCCs). The median survival for all patients was 25.5 months. The 1-, 2-, 3- and 5-year survival rates were 84.6, 58.7, 37.6 and 14.6%, respectively. Statistical analysis revealed a significant difference in survival between Barcelona Clinic Liver Cancer (BCLC) A (73.4 months) and B (50.3 months) patients, while analyses failed to show a difference for Child-Pugh score, Cancer of Liver Italian Program (CLIP) score and tumor distribution pattern. Conclusion: TACE combined with RFA provides an effective treatment approach with high local tumor control rates and promising survival data, especially for BCLC A patients. Randomized trials are needed to compare this multimodality approach with a single modality approach for early-stage HCC. Copyright (C) 2011 S. Karger AG, Base

Low retinal noise in animals with low body temperature allows high visual sensitivity

The weakest pulse of light a human can detect sends about 100 photons through the pupil and produces 10−20 rhodopsin isomerizations in a small retinal area1,2. It has been postulated3 that we cannot see single photons because of a retinal noise arising from randomly occurring thermal isomerizations. Direct recordings have since demonstrated the existence of electrical 'dark' rod events indistinguishable from photoisomerization signals4−6. Their mean rate of occurrence is roughly consistent with the 'dark light' in psychophysical threshold experiments, and their thermal parameters justify an identification with thermal isomerizations5. In the retina of amphibians, a small proportion of sensitive ganglion cells have a performance-limiting noise that is low enough to be well accounted for by these events7−10. Here we study the performance of dark-adapted toads and frogs and show that the performance limit of visually guided behaviour is also set by thermal isomerizations. As visual sensitivity limited by thermal events should rise when the temperature falls, poikilothermous vertebrates living at low temperatures should then reach light sensitivities unattainable by mammals and birds with optical factors equal. Comparison of different species at different temperatures shows a correlation between absolute threshold intensities and estimated thermal isomerization rates in the retina