Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs, which result in the potential pinning effect and deteriorate the gate control. While, on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, in which edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, device performance of BP He-TFETs can be further optimized and fulfill the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along armchair direction on-state current can reach above 10$^3$ $\mu$A/$\mu$m with the fixed off-state current of 10 $pA/\mu$m. It is also found that ambipolar effect can be effectively suppressed in BP He-TFETs.Comment: 12 pages, 5 figure

Locating influential nodes via dynamics-sensitive centrality

With great theoretical and practical significance, locating influential nodes of complex networks is a promising issues. In this paper, we propose a dynamics-sensitive (DS) centrality that integrates topological features and dynamical properties. The DS centrality can be directly applied in locating influential spreaders. According to the empirical results on four real networks for both susceptible-infected-recovered (SIR) and susceptible-infected (SI) spreading models, the DS centrality is much more accurate than degree, $k$-shell index and eigenvector centrality.Comment: 6 pages, 1 table and 2 figure