Ab initio study of electron mean free paths and thermoelectric properties of lead telluride

Last few years have witnessed significant enhancement of thermoelectric figure of merit of lead telluride (PbTe) via nanostructuring. Despite the experimental progress, current understanding of the electron transport in PbTe is based on either band structure calculation using first principles with constant relaxation time approximation or empirical models, both relying on adjustable parameters obtained by fitting experimental data. Here, we report parameter-free first-principles calculation of electron and phonon transport properties of PbTe, including mode-by-mode electron-phonon scattering analysis, leading to detailed information on electron mean free paths and the contributions of electrons and phonons with different mean free paths to thermoelectric transport properties in PbTe. Such information will help to rationalize the use and optimization of nanostructures to achieve high thermoelectric figure of merit

Dirac-Electrons-Mediated Magnetic Proximity Effect in Topological Insulator / Magnetic Insulator Heterostructures

The possible realization of dissipationless chiral edge current in a topological insulator / magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. Here we report a polarized neutron reflectometry observation of Dirac electrons mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi$_{0.2}$Sb$_{0.8}$)$_{2}$Te$_{3}$ / magnetic insulator EuS heterostructure. We are able to maximize the proximity induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the charge neutral point. A phenomenological model based on diamagnetic screening is developed to explain the suppressed proximity induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator hetero-interface for low-power spintronic applications.Comment: 5 pages main text with 4 figures; 2 pages supplemental materials; suggestions and discussions are welcome

Phonon Hydrodynamic Heat Conduction and Knudsen Minimum in Graphite

In the hydrodynamic regime, phonons drift with a nonzero collective velocity under a temperature gradient, reminiscent of viscous gas and fluid flow. The study of hydrodynamic phonon transport has spanned over half a century but has been mostly limited to cryogenic temperatures (∼1 K) and more recently to low-dimensional materials. Here, we identify graphite as a three-dimensional material that supports phonon hydrodynamics at significantly higher temperatures (∼100 K) based on first-principles calculations. In particular, by solving the Boltzmann equation for phonon transport in graphite ribbons, we predict that phonon Poiseuille flow and Knudsen minimum can be experimentally observed above liquid nitrogen temperature. Further, we reveal the microscopic origin of these intriguing phenomena in terms of the dependence of the effective boundary scattering rate on momentum-conserving phonon-phonon scattering processes and the collective motion of phonons. The significant hydrodynamic nature of phonon transport in graphite is attributed to its strong intralayer sp2 hybrid bonding and weak van der Waals interlayer interactions. More intriguingly, the reflection symmetry associated with a single graphene layer is broken in graphite, which opens up more momentum-conserving phonon-phonon scattering channels and results in stronger hydrodynamic features in graphite than graphene. As a boundary-sensitive transport regime, phonon hydrodynamics opens up new possibilities for thermal management and energy conversion. Keywords: collective drift motion; first-principles calculation; Knudsen minimum; Phonon hydrodynamic; phonon Poiseuille flo

Isotope engineering of carrier mobility via Fr\"ohlich electron-phonon interaction

Isotope effects on phonon properties and transport have been predicted and observed for decades. However, despite the crucial impact of electron-phonon interactions, the effect of isotopes on electron transport remains largely unexplored. Here, by using first-principles calculations, we theoretically predict that the electron mobility of lithium hydride (LiH) can increase by up to ~100% as $^3\rm{H}$ is replaced with $^1\rm{H}$. This remarkable phenomenon is primarily attributed to the isotope engineering of the Fr\"ohlich interaction by the mass-induced line shift of the longitudinal optical (LO) phonons. Notably, the isotope-dependent absorption of LO phonons dominates while the isotope-insensitive emission process is mostly suppressed due to energy conservation. We further propose general guidelines for evaluating isotope effects on carrier transport in different materials

Effect of solvation shell structure on thermopower of liquid redox pairs

Recent advancements in thermogalvanic batteries offer a promising route to efficient harvesting of low-grade heat with temperatures below 100 {\deg}C. The thermogalvanic temperature coefficient {\alpha}, usually referred to as effective thermopower, is the key parameter determining the power density and efficiency of thermogalvanic batteries. However, the current understanding of improving {\alpha} of redox pairs remains at the phenomenological level without microscopic insights, and the development of electrolytes with high {\alpha} largely relies on experimental trial and error. This work applies the free energy perturbation method based on molecular dynamics simulations to predict the {\alpha} of the {Fe^{3+}/Fe^{2+}} redox pair in aqueous and acetone solutions. We showed that {\alpha} of the {Fe^{3+}/Fe^{2+}} redox pair can be increased from 1.5{\pm}0.3 mV/K to 4.1{\pm}0.4 mV/K with the increased acetone to water fraction. The predicted {\alpha} of {Fe^{3+}/Fe^{2+}} both in pure water and acetone show excellent agreement with experimental values. By monitoring the fluctuation of dipole orientations in the first solvation shell, we discovered a significant change in the variance of solvent dipole orientation between Fe^{3+} and Fe^{2+}, which can be a microscopic indicator for large magnitudes of {\alpha}. The effect of acetone weight fraction in the mixed acetone-water solvent on the {\alpha} of {Fe^{3+}/Fe^{2+}} is also studied. Acetone molecules are found to intercalate into the first solvation shell of the {Fe^{2+}} ion at high acetone fractions, while this phenomenon is not observed in the solvation shell of the Fe^{3+} ion. Such solvation shell structure change of {Fe^{2+}} ions contributes to the enhanced {\alpha} at high acetone fractions. Our discovery provides atomistic insights into how solvation shell order can be leveraged to develop electrolytes with high thermopower

First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs

We present a first-principles framework to investigate the electron scattering channels and transport properties for polar material by combining the exact solution of linearized electron-phonon (e-ph) Boltzmann transport equation in its integral-differential form associated with the e-ph coupling matrices obtained from polar Wannier interpolation scheme. No ad hoc parameter is required throughout this calculation, and GaAs, a well-studied polar material, is used as an example to demonstrate this method. In this work, the long-range and short-range contributions as well as the intravalley and intervalley transitions in the e-ph interactions (EPIs) have been quantitatively addressed. Promoted by such mode-by-mode analysis, we find that in GaAs, the piezoelectric scattering is comparable to deformation-potential scattering for electron scatterings by acoustic phonons in EPI even at room temperature and makes a significant contribution to mobility. Furthermore, we achieved good agreements with experimental data for the mobility, and identified that electrons with mean free paths between 130 and 210 nm contribute dominantly to the electron transport at 300 K. Such information provides deeper understandings on the electron transport in GaAs, and the presented framework can be readily applied to other polar materials