Interplay between planar defects and threading dislocations in GaAs-on-Si

GaAs-on-Si films grown by Molecular Beam Epitaxy (MBE) on vicinal (100) Si substrates were examined by means of Transmission Electron Microscopy in order to study the dependence of threading dislocations' density on the formation of planar defects. We found that the threading dislocations' density slightly changes in the mid-range angles (1.5°-6°) and is in the order of 10 8 cm -2. The dislocation density is minimised significantly for tilting angles below 1°. However a large number of planar defects appears for very small and large angles. The appearance of microtwins in a narrow zone is characteristic for 0.5° tilting angle while the anisotropic growth of stacking faults characterises films grown on large angle tilted Si substrate. © 1999 Trans Tech Publications

Interplay between planar defects and threading dislocations in GaAs-on-Si

GaAs-on-Si films grown by Molecular Beam Epitaxy (MBE) on vicinal (100) Si substrates were examined by means of Transmission Electron Microscopy in order to study the dependence of threading dislocations' density on the formation of planar defects. We found that the threading dislocations' density slightly changes in the mid-range angles (1.5°-6°) and is in the order of 10 8 cm -2. The dislocation density is minimised significantly for tilting angles below 1°. However a large number of planar defects appears for very small and large angles. The appearance of microtwins in a narrow zone is characteristic for 0.5° tilting angle while the anisotropic growth of stacking faults characterises films grown on large angle tilted Si substrate. © 1999 Trans Tech Publications

Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H-SiC semiconductor and Ni1+xTe1 embedded nanodomains

Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni 1+xTe 1embedded nanodomains and ion-thinned specimens of 6H-SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods. © 2012 IOP Publishing Ltd

Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H-SiC semiconductor and Ni1+xTe1 embedded nanodomains

Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni1+xTe1 embedded nanodomains and ion-thinned specimens of 6H-SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods. RI Kolb, Ute/A-2642-2011; Mugnaioli, Enrico/E-6237-201