In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films

Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray intensity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace levels is obtained. The after-deposition surface recovery is very slow. Annealing at 310 degrees Celsius combined with the deposition of one monolayer of Fe3Si restores the surface to high perfection and minimal roughness. Our stoichiometric films possess long-range order and a high quality heteroepitaxial interface.Comment: 8 pages, 3 figure

Influence of magnetostatic interactions on the magnetization reversal of patterned magnetic elements

10.1063/1.3567180Journal of Applied Physics1097-JAPI

Potential Economic Impact of Offshore Wind Power Planning in Taiwan

補正完畢TW

Increasing the PLED Luminescence Efficiency by Exploiting the Surface Plasmon Resonance Effect

Thermal evaporation was used to fabricate 60-nm Au particles sandwiched between a self-made nitrogen-doped aluminum zinc oxide film and a glass substrate to form novel window materials for use in polymer light emitting diodes (PLEDs). The PLEDs considered herein are single-layer devices based on a poly [2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] emissive layer. In addition to its low cost, this novel fabrication method can effectively prevent interruption or degradation of the charge transport properties of the active layer to meet the high performance requirements of PLEDs. The luminance-voltage measurements show that the absorption band of the Au nanoparticles due to the surface plasmon resonance effect increased the general luminescence efficiency of the PLED device by 60%. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527981] All rights reserved

Quantitative study of magnetoresistance in patterned Ni80Fe20 wires

The domain wall resistivity of the patterned Ni80Fe20 zigzag wires has been studied as functions of the number of corners and temperature in zigzag wires. The quantitative ratio of domain wall magnetoresistance (MR) is estimated by two methods. One is the discontinuous jump that represent the domain state sweep between two states in MR curve. The other is the angular dependence on the resistance at remanent state. The ratio of domain wall MR increased when domain wall number density over total wire length (DWs/L) changed from 12/73 to 34/73 with film thickness 40 nm at 10-300 K. Especially, the ratio of. domain wall MR decreased slightly as the temperature ranged from 10 to 300 K. The anisotropic magnetoresistance (AMR) has been subtracted in the calculation. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim