Structural properties of Sn-doped in2S3 layers grown by chemical bath deposition

Tin doped In2S3 films have been prepared by chemical bath deposition with different Sn-dopant concentrations that varied in the range, 0 - 5% at a constant bath temperature of 70 oC. All the layers exhibited a strong (109) plane as the preferred orientation with tetragonal In2S3 structure. The crystallinity increases with increase of ‘Sn’ composition and showed a grain size of 46.3 nm at a Sn doping of 4.5 at. %. The Raman studies showed different peaks related to In2S3 phase and didn’t show any secondary phases of In-S and Sn-S. The results are presented and discussed

Physical properties of ZnxCd1-xS nanocrystalline layers synthesized by solution growth method

In recent years, zinc cadmium sulphide (ZnxCd1-xS) alloy compounds have paid much attention in the fields of opto-electronics, particularly in photovoltaic devices because of its tunable energy gap and the lattice parameters. The energy band gap of ZnxCd1-xS is controlled by the change of Zn-composition in order to suit the material properties with that of absorber material in solar cells. In this paper, we report on the effect of Zn-composition on physical properties of ZnxCd1-xS thin films deposited on corning glass substrates by solution growth method. The layers were prepared for different ‘x’ values that vary in the range, 0 – 1.0 at. %. The as-grown layers were characterized using EDAX, XRD, SEM, and UV-Vis-NIR spectrophotometers. All the layers showed a strong (002) plane as the preferred orientation that exhibited the hexagonal crystal structure. The composition of the layers agrees approximately with that of the elements in the solution. The films showed an average optical transmittance of 72 % at a zinc composition of 0.75 with a band gap of 3.88 eV