Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

n-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC vacancy. The silicon vacancy and the carbon vacancy were found to anneal out in the temperature range 400-650 °C. The VCVSi divacancy was found to persist at an annealing temperature of 1400 °C.published_or_final_versio

Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

Defects in p-type Zn-doped liquid-encapsulated Czochralski - grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral VGa-related defect. Its concentration in the as-grown sample was found to be in the range of 1017-1018 cm-3. At an annealing temperature of 300 °C, the VGa-related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy - Zn-defect complex. This defect started annealing out at a temperature of 580 °C. A positron shallow trap having binding energy and concentration of 75 meV and 1018 cm-3, respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn.published_or_final_versio

Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy

The evolution of near-interfacial defects from Al2 O3 ZnO and MgOZnO upon thermal annealing has been studied by photoluminescence, deep level transient spectroscopy, and secondary ion mass spectroscopy. We find that all the results are strongly connected and that they point to the direction that Zn outdiffuses from ZnO to the oxide layer during annealing and creates deep level defects near the interfacial region. These defects reduce the band-edge emission and increase the deep level emission at 2.37 eV. Our study shows that the oxide/ZnO interface is relatively fragile and caution must be taken for making metal-oxide-ZnO based transistors and light emitting diodes. © 2008 American Institute of Physics.published_or_final_versio

Undoped gallium antimonide studied by positron annihilation spectroscopy

Positron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGarelated defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the V Ga-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C.published_or_final_versio

Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam

The interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm-1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm-1 (biases>50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III-V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics.published_or_final_versio

Energy loss of monoenergetic positrons passing through a thin carbon foil

In this paper, the measurements of energy loss and energy loss straggling for 1-10 keV monoenergetic positrons passing through thin carbon foils of different thicknesses ranging from 1.0 to 5.0 μg/cm 2 are presented. The stopping power dE/dx and positron transmission coefficient as a function of incident positron energy and foil thickness have also been investigated. Particularly, the experimental results obtained are compared with those from Monte Carlo simulation and theory with a view to providing a way to determine the actual thickness of a carbon foil. The ratio of the energy straggling to the foil thickness seems to have a linear relation with the beam energy. © 2011 Elsevier B.V. All rights reserved.postprin

Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements

A ±100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (E a=0.81±0.15 eV) and EL6 (E a=0.30±0.12 eV) have been identified. © 2002 American Institute of Physics.published_or_final_versio

Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

The influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.published_or_final_versio

Evaluation of the string test for the detection of Helicobacter pylori

Aim: Helicobacter pylori can be diagnosed by invasive or non-invasive tests but to obtain bacteria for culture and antibiotic susceptibility testing, an upper GI endoscopy is often required. The string test may be a minimally-invasive alternative method of obtaining H. pylori samples. This study evaluates the sensitivity and specificity of the string test in the diagnosis of H. pylori in comparison with endoscopic means of diagnosis. Methods: This was a prospective open comparative study of patients with dyspepsia with endoscopy-based tests as gold standard (defined as a positive CLO test and antral histology). Fasting patients swallowed the encapsulated-string (Entero-test Hp), which was withdrawn after 1 hour. The gastric juice from the string was plated onto H. pylori-selective media for culture. Helicobacter pylori was identified by typical colony morphology, gram stain and biochemical test results. Results: Thirty dyspeptic patients were recruited of whom 21 (70 %) were positive for H. pylori according to the gold standard. The sensitivity, specificity, positive predictive value, and negative predictive value for the string test were 38 %, 100 %, 100 % and 41 % respectively, and for endoscopic biopsies 81 %, 100 %, 100 %, 69 % respectively (P=0.004). Logistic regression showed that only abundant growth density from endoscopic biopsy cultures to be a predictor of a positive string test (P=0.018). Conclusion: The string test is an alternative method to endoscopy in obtaining H. pylori but has a low sensitivity compared to endoscopic biopsies.published_or_final_versio

Positron-annihilation study of compensation defects in InP

Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700°C, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950°C makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime τ av increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of τ av increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950°C. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. © 2002 American Institute of Physics.published_or_final_versio