Correlation effects in the density of states of annealed GaMnAs

We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of states of GaMnAs. Our experiment shows that low temperature annealing is a direct empirical tool that modifies the correlation gap and thus the electron-electron interaction. Consistent with previous results on boron-doped silicon we find, as a function of voltage, a transition across the phase boundary delimiting the direct and exchange correlation regime.Comment: Replaced with revised version. To appear in Phys. Rev.

Electronic and magnetic properties of GaMnAs: Annealing effects

The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is studied by in-situ conductivity measurements as well as Raman and SQUID measurements before and after annealing. Whereas the conductivity monotonously increases with increasing annealing time, the hole density and the Curie temperature show a saturation after annealing for 30 minutes. The incorporation of thin InGaMnAs layers drastically enhances the Curie temperature of the GaMnAs layers.Comment: 4 pages, 6 figures, submitted to Physica

Searching for tetraquarks on the lattice

We address the question whether the lightest scalar mesons sigma and kappa are tetraquarks. We present a search for possible light tetraquark states with J^PC=0^++ and I=0, 1/2, 3/2, 2 in the dynamical and the quenched lattice simulations using tetraquark interpolators. In all the channels, we unavoidably find lowest scattering states pi(k)pi(-k) or K(k)pi(-k) with back-to-back momentum k=0,2*pi/L,.. . However, we find an additional light state in the I=0 and I=1/2 channels, which may be related to the observed resonances sigma and kappa with a strong tetraquark component. In the exotic repulsive channels I=2 and I=3/2, where no resonance is observed, we find no light state in addition to the scattering states.Comment: 3 pages, 1 figure, proceedings of Lepton-Photon 2009, Hambur

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

The effect of annealing at 250 C on the carrier depth profile, Mn distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As layers with thicknesses > 200 nm, grown by molecular-beam epitaxy at low temperatures, is studied by a variety of analytical methods. The vertical gradient in hole concentration, revealed by electrochemical capacitance-voltage profiling, is shown to play a key role in the understanding of conductivity and magnetization data. The gradient, basically already present in as-grown samples, is strongly influenced by post-growth annealing. From secondary ion mass spectroscopy it can be concluded that, at least in thick layers, the change in carrier depth profile and thus in conductivity is not primarily due to out-diffusion of Mn interstitials during annealing. Two alternative possible models are discussed.Comment: 8 pages, 8 figures, to appear in Phys. Rev.

Fermion loop simulation of the lattice Gross-Neveu model

We present a numerical simulation of the Gross-Neveu model on the lattice using a new representation in terms of fermion loops. In the loop representation all signs due to Pauli statistics are eliminated completely and the partition function is a sum over closed loops with only positive weights. We demonstrate that the new formulation allows to simulate volumes which are two orders of magnitude larger than those accessible with standard methods