Tensile, Thermal And Uv-Resistance Properties Of Poly(Lactic Acid)/Zinc Oxide Treated Halloysite Nanotubes Nanocomposites

The aim of this research is to prepare poly(lactic acid)/halloysite nanotube PLA/HNT nanocomposites (with and without zinc oxide (ZnO) treatment) with high photostability. ZnO treated HNT with optimum charge stability, structural and morphological properties were successfully fabricated via a solvent free technique. Thereafter, HNT-ZnO (1:2) (the optimum formulation) was incorporated into PLA, and the effects of ZnO treated HNT at various loadings (1, 3, 5, 7, 10 wt%) were evaluated on the mechanical, thermal and UV resistance properties with respect to PLA/HNT nanocomposites. PLA/HNT-3 shows a balance in tensile modulus, tensile strength and elongation at break. The thermal stability of both PLA/HNT-ZnO and PLA/HNT are higher than that of PLA. UV-Vis results demonstrated that addition of ZnO substantially enhanced the UV-blocking ability of PLA nanocomposites whilst maintaining moderate transparency in film. Upon exposure to accelerated weathering test for a period of 0, 30 and 60 days, PLA/HNT nanocomposites with ZnO treatment showed decreased in the yellowing index (YI) and not much change in colour of films was noted. The low YI values denote that the UV resistance was higher in PLA/HNT-ZnO films as compared to PLA/HNT. In addition, FTIR studies revealed the decrease in carbonyl index (ICO) values of PLA/HNT-ZnO at the initial stage of 30 days. This is associated that in presence of HNT-ZnO, the PLA nanocomposites are less susceptible to photodegradation, as less occurance of chain scission and lesser reduction in the molecular weight of PLA were discerned

Assessment on Heck-Immine Derivatives as Organic Semiconductor Materials

This paper reports the synthetic, characterization and theoretical evaluation of new class of hybrid Heck-immine system involving mixed moieties of vinylene (C=C) and azomethines (CH=N) which has been successfully integrated into an addition of organic semiconducting materials. The assessment of 4-[(hexyloxyphenyl)methylene]amino)-4’-chlorostilbene (HEXCS) based on Donor (D)-π-Acceptor (A) was evaluated as active semiconductor material candidates via several spectroscopic and analytical techniques. In turn, the investigation of its potential as dopant system in conductive film was successfully deposited on indium tin oxide (ITO) coated substrate via spin coating method. The relationship between electronic and optical properties, chemical modelling at molecular interactions and electrical performances of the designated system were evaluated. In addition, the quantum mechanical calculation proved that the value of energy separation of HEXCS between HOMO and LUMO exhibits 3.09 eV which was in good agreement with the experimental result of optical band gap 3.10 eV. The findings from the thermal and conductivity analysis revealed that the developed film HEXCS exhibited good stability at high temperature and electrical performance with an increasing conductivity up to 0.1531 Scm-1 under maximum light intensity of 100 Wm-2. Therefore, this proposed type of molecular framework has given an ideal indication to act as semiconductor material candidates potentially use in any designated electronic application