Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device

Bipolar-threshold switching was demonstrated using volatile-atomic switches (VAS) for cross-point selector applications. The VAS (Cu/Cu2S/W) exhibits asymmetric current–voltage (I–V) characteristics. An abrupt conductance change occurs by the formation of a Cu filament when a positive voltage is applied to the Cu electrode. Meanwhile, nonlinear I–V characteristics are observed because of the high concentration of vacancy of Cu under a negative voltage. We thus introduce the complementary-VAS configuration for the self-compliance characteristics at both polarities. Furthermore, the increased the switching voltage at a fast sweeping rate allows the VAS to show a strong immunity to electrical disturbance.

Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device

Bipolar-threshold switching was demonstrated using volatile-atomic switches (VAS) for cross-point selector applications. The VAS (Cu/Cu2S/W) exhibits asymmetric current?voltage (I?V) characteristics. An abrupt conductance change occurs by the formation of a Cu filament when a positive voltage is applied to the Cu electrode. Meanwhile, nonlinear I?V characteristics are observed because of the high concentration of vacancy of Cu under a negative voltage. We thus introduce the complementary-VAS configuration for the self-compliance characteristics at both polarities. Furthermore, the increased the switching voltage at a fast sweeping rate allows the VAS to show a strong immunity to electrical disturbance. ? 2017 The Electrochemical Society. All rights reserved.112sciescopu

Proton–Based Three–Terminal Synapse Device with Analog Conductance Change and Linear I-V Characteristics for Neuromorphic Systems

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Improved On-Current of Ag/NiO/TiO2/Pt Threshold Switching Device by Suppressing the Ag Incorporation

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Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For this aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared and examined. First, we carry out the field driven turn-on process to form Ag filaments created as a consequence of sequential nucleation of Ag ions from the bottom electrode. During the filament formation process, it is observed that the prepared devices show switching time exponential in voltage and temperature with different nucleation barrier energies (W-0), which confirms the field-induced nucleation theory. Furthermore, we find that the device with higher W-0 shows faster dissolution speed. This implies that the slow turn-off speed of the TS device can be improved by finding a material system with a higher W-0 value. Published by AIP Publishing.116sciescopu

Thermally Stable Resistive Switching Characteristics of Te-Based Conductive-Bridge Memoryby Optimizing Zr-Te Composition

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CMOS compatible low-power volatile atomic switch for steep-slope FET devices

In this paper, we demonstrate a volatile atomic switch that can be utilized for obtaining steep subthreshold swing (SS) (60 mV/dec). The result shows an improvement in the SS, which results from the transition of the atomic switch between the ON and OFF states, which is caused by the formation and rupture of a conductive filament. As a result, excellent switching characteristics are obtained for the FETs, such as low I-OFF (similar to 10(-5) mu A/mu m), high I-NO/I-OFF ratio (similar to 10(-5)), low V-DD (similar to 0.25 V), and steep SS (<5 mV/dec). Published by AIP Publishing.11Nsciescopu

Hardware Implementation of Neural Network Using Pre-Programmed Resistive Device for Pattern Recognition

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