Rectifying "nanohomo" contacts of W-Ga-C composite pad and nanowire fabricated by focused-ion-beam induced chemical vapour deposition

We prepared W-Ga-C composite contacts on W-Ga-C composite nanowires by focused-ion-beam-induced chemical vapor deposition using a dual-beam scanning electron microscope/focused-ion-beam system. The current-voltage (I-V) characteristics of wires were found to change from nonlinear to linear with increasing wire thickness. For wires with small dimensions, which result in strong nonlinear I-V behavior at room temperature, pairs of contacts were fabricated along the wire under different ion energies and scanning modes. Nonlinear and asymmetric rectifying I-V characteristics were observed. The results suggest that nanoscaled W-Ga-C nanowires may behave similarly to semiconductors and that the contact characteristics may be modified using different deposition conditions. Furthermore, ohmiclike junctions could be formed through the use of specific deposition conditions for the contact pads and nanowires

Meson Emission Model of Psi to N Nbar m Charmonium Strong Decays

In this paper we consider a sequential "meson emission" mechanism for charmonium decays of the type Psi -> N Nbar m, where Psi is a generic charmonium state, N is a nucleon and m is a light meson. This decay mechanism, which may not be dominant in general, assumes that an NNbar pair is created during charmonium annihilation, and the light meson m is emitted from the outgoing nucleon or antinucleon line. A straightforward generalization of this model can incorporate intermediate N* resonances. We derive Dalitz plot event densities for the cases Psi = eta_c, J/psi, chi_c0, chi_c1} and psi' and m = pi0, f0 and omega (and implicitly, any 0^{-+}, 0^{++} or 1^{--} final light meson). It may be possible to separate the contribution of this decay mechanism to the full decay amplitude through characteristic event densities. For the decay subset Psi -> p pbar pi0 the two model parameters are known, so we are able to predict absolute numerical partial widths for Gamma(Psi -> p pbar pi0). In the specific case J/psi -> p pbar pi0 the predicted partial width and M_{p pi0} event distribution are intriguingly close to experiment. We also consider the possibility of scalar meson and glueball searches in Psi -> p pbar f0. If the meson emission contributions to Psi -> N Nbar m decays can be isolated and quantified, they can be used to estimate meson-nucleon strong couplings {g_NNm}, which are typically poorly known, and are a crucial input in meson exchange models of the NN interaction. The determination of g_NNpi from J\psi -> p pbar pi0 and the (poorly known) g_NNomega and the anomalous "strong magnetic" coupling kappa_{NNomega} from J/psi -> p pbar omega are considered as examples.Comment: 10 pages, 5 figure

Constraint on intermediate-range gravity from earth-satellite and lunar orbiter measurements, and lunar laser ranging

In the experimental tests of gravity, there have been considerable interests in the possibility of intermediate-range gravity. In this paper, we use the earth-satellite measurement of earth gravity, the lunar orbiter measurement of lunar gravity, and lunar laser ranging measurement to constrain the intermediate-range gravity from lambda=1.2*10^{7}m - 3.8*10^{8}m. The limits for this range are alpha=10^{-8}-5*10^{-8}, which improve previous limits by about one order of magnitude in the range lambda=1.2*10^{7}m-3.8*10^{8}m.Comment: 8 pages, International Journal of Modern Physics D, in press (World Scientific, 2005

Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors

The charge transport behaviors of parallel double single electron transistors (SETs) are investigated by the Anderson model with two impurity levels. The nonequilibrium Keldysh Green's technique is used to calculate the current-voltage characteristics of system. For SETs implemented by quantum dots (QDs) embedded into a thin $SiO_2$ layer, the interdot Coulomb repulsion is more important than the interdot electron hopping as a result of high potential barrier height between QDs and $SiO_2$. We found that the interdot Coulomb repulsion not onlyleads to new resonant levels, but also creates negative differential conductances.Comment: 12 pages, 7 figure

Fluctuation limits of strongly degenerate branching systems

Functional limit theorems for scaled fluctuations of occupation time processes of a sequence of critical branching particle systems in $\R^d$ with anisotropic space motions and strongly degenerated splitting abilities are proved in the cases of critical and intermediate dimensions. The results show that the limit processes are constant measure-valued Wienner processes with degenerated temporal and simple spatial structures.Comment: 15 page

Boron nanobelts grown under intensive ion bombardment

High-quality α-tetragonal crystalline boronnanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growingboronnanobelts at a high substrate temperature (∼1200°C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.This work was supported by the Australian Research Council ARC