InGaAs Quantum Dots Grown with GaP Strain Compensation Layers

The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer

Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate

Highly strained InxGa1-xAs (x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtaine

On the Pulsed Anodic Oxidation of n + -InP

We have performed a parametric investigation of the anodic oxidation of highly doped n-type InP(100) using a pulsed current source. Approximately 75% of the oxide growth took place within the first ∼ 10 s of oxidation, and the equilibrium oxide thickne

Characteristics of MOCVD-Grown Thin p-Clad InGaAs Quantum-Dot Lasers

Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices

Investigation of the Blueshift in Electroluminescence Spectra from MOCVD Grown InGaAs Quantum Dots

The electroluminescence of a quantum-dot (QD) laser diode was found to blueshift as the injection current is increased. The carrier distribution within the QD layers was modeled and the Stark shift, measured from photocurrent, was used to explain the large blueshift seen in the electroluminescence. The built-in electric dipole was found to be dependant on growth conditions

Characterisation of InGaAs/GaAs Quantum Dot Lasers Grown by Metal-Organic Vapour Phase Epitaxy

A major problem facing quantum dot lasers is gain saturation. This is caused by low gain volume and also a low wavefunction overlap within the quantum dots. One method to increase the gain volume is to increase the number of layers of quantum dots. This paper compares the characteristics of lasers with three and five layers of quantum dots. It is shown that five layer devices can be made with improved efficiency and wavelength characteristics without a significant increase in the losses

In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm.