Template epitaxial growth of thermoelectric Bi/BiSb superlattice nanowires by charge-controlled pulse electrodeposition

© The Electrochemical Society, Inc. 2009. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in The Journal of The Electrochemical Society, 156(9), 2009.Bi/BiSb superlattice nanowires (SLNWs) with a controllable and very small bilayer thickness and a sharp segment interface were grown by adopting a charge-controlled pulse electrodeposition. The deposition parameters were optimized to ensure an epitaxial growth of the SLNWs with a preferential orientation. The segment length and bilayer thickness of the SLNWs can be controlled simply by changing the modulating time, and the consistency of the segment length can be well maintained by our approach. The Bravais law in the electrodeposited nanowires is verified by the SLNW structure. The current–voltage measurement shows that the SLNWs have good electrical conductance, particularly those with a smaller bilayer thickness. The Bi/BiSb SLNWs might have excellent thermoelectric performances.National Natural Science Foundation of China and the National Major Project of Fundamental Research for Nanomaterials and Nanostructures

ショク ノ アンゼンセイ キセイ ト ソノ ノウギョウ セイサン オヨビ ボウエキ エノ エイキョウ : チュウゴク ノ ヤサイ セイサン ノ ジレイ ケンキュウ

博士（農学）東京農工大

Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer

We report scanning tunneling microscopy (STM) and spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 seconds). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously