Carbon-substitution effect on the electronic properties of MgB2_2 single crystals

The electronic properties of the carbon substituted MgB$_2$ single crystals are reported. The carbon substitution drops T$_c$ below 2 K. In-plane resistivity shows a remarkable increase in residual resistivity by C-substitution, while the change of in-plane/out-of-plane Hall coefficients is rather small. Raman scattering spectra indicate that the E$_{2g}$-phonon frequency radically hardens with increasing the carbon-content, suggesting the weakening of electron-phonon coupling. Another striking C-effect is the increases of the second critical fields in both in-plane and out-of-plane directions, accompanied by a reduction in the anisotropy ratio. The possible changes in the electronic state and the origin of T$_c$-suppression by C-substitution are discussed.Comment: 6 pages, 8 figure

Dynamical renormalization group approach to the Altarelli-Parisi-Lipatov equations

The Altarelli-Parisi-Lipatov equations for the parton distribution functions are rederived using the dynamical renormalization group approach to quantum kinetics. This method systematically treats the ln Q^2 corrections that arises in perturbation theory as a renormalization of the parton distribution function and unambiguously indicates that the strong coupling must be allowed to run with the scale in the evolution kernel. To leading logarithmic accuracy the evolution equation is Markovian and the logarithmic divergences in the perturbative expansion are identified with the secular divergences (terms that grow in time) that emerge in a perturbative treatment of the kinetic equations in nonequilibrium systems. The resummation of the leading logarithms by the Altarelli-Parisi-Lipatov equation is thus similar to the resummation of the leading secular terms by the Boltzmann kinetic equation.Comment: 8 pages, version to appear in Phys. Rev.

Ballistic spin field-effect transistors: Multichannel effects

We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined for the number of channels ranging from a few to close to 100. Even with the ideal spin injector and collector, the conductance modulation ratio, defined as the ratio between the maximum and minimum conductances, decays rapidly and approaches one with the increase of the channel number. It turns out that the decay is considerably faster when the Rashba spin-orbit coupling is larger. Effects of the electronic coherence are also examined in the multi-channel regime and it is found that the coherent Fabry-Perot-like interference in the multi-channel regime gives rise to a nested peak structure. For a nonideal spin injector/collector structure, which consists of a conventional metallic ferromagnet-thin insulator-2DEG heterostructure, the Rashba-coupling-induced conductance modulation is strongly affected by large resonance peaks that arise from the electron confinement effect of the insulators. Finally scattering effects are briefly addressed and it is found that in the weakly diffusive regime, the positions of the resonance peaks fluctuate, making the conductance modulation signal sample-dependent.Comment: 18 pages, 15 figure