Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2-xTeySe3-y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called minor-loop measurement, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2−xTeySe3−y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called minor-loop measurement, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model.This work was supported by the Korea Institute of Science and Technol‑ogy (KIST) through 2E31550 and by the National Research Foundation program through NRF-2021M3F3A2A03017782, 2021M3F3A2A01037814, 2021M3F3A2A01037738, 2021R1A2C3011450, and 2020R1A2C200373211,[Innovative Talent Education Program for Smart City] by MOLI

THz Pulse Near-Field Microscopes: Optimum Operation Conditions

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THz Near-Field Microscopy

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THz Pulse Near-Field Microscopy

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Terahertz Dielectric Relaxation Dynamics of Tris-HCl Buffer

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A novel bias circuit with temperature and process compensation for RFIC

Temperature and process variations have become key issues in design of integrated circuits using deep submicron technologies.In the RF front-end circuitry, these characteristics must be compensated to maintain acceptable performance across all process corners and throughout the temperature variations. This article proposes a new bias circuit technique to compensate the variations by adding a single NMOS to the normally bias circuit. A 2.4GHz and 5.2GHz LNAs with the proposed bias circuit have the power gain variation (S21) of only 0.3 dB for the -40 to 85 degrees C temperature range in a 65nm RF CMOS process. (c) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:26942697, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27170X110sciescopu

Terahertz Near-Field Microscopy

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