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Method of making MOS transistor having improved oxynitride dielectric
High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.Board of Regents, University of Texas Syste
Charge density functional plus calculation of lacunar spinel GaMSe (M = Nb, Mo, Ta, and W)
Charge density functional plus calculations are carried out to examine
the validity of molecular =1/2 and 3/2 state in lacunar spinel
GaMX (M = Nb, Mo, Ta, and W). With LDA (spin-unpolarized local density
approximation), which has recently been suggested as the more desirable
choice than LSDA (local spin density approximation), we examine the band
structure in comparison with the previous prediction based on the
spin-polarized version of functional and with the prototypical
=1/2 material SrIrO. It is found that the previously
suggested =1/2 and 3/2 band characters remain valid still in
LDA calculations while the use of charge-only density causes some minor
differences. Our result provides the further support for the novel molecular
state in this series of materials, which can hopefully motivate
the future exploration toward its verification and the further search for new
functionalities
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