A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi

Measurements of the Hall conductivity in MnSi can provide incisive tests of theories of the anomalous Hall (AH) effect, because both the mean-free-path and magnetoresistance (MR) are unusually large for a ferromagnet. The large MR provides an accurate way to separate the AH conductivity $\sigma_{xy}^A$ from the ordinary Hall conductivity $\sigma_{xy}^N$. Below the Curie temperature $T_C$, $\sigma_{xy}^A$ is linearly proportional to $M$ (magnetization) with a proportionality constant $S_H$ that is independent of both $T$ and $H$. In particular, $S_H$ remains a constant while $\sigma_{xy}^N$ changes by a factor of 100 between 5 K and $T_C$. We discuss implications of the hidden constancy in $S_H$.Comment: 5 pages, 4 figures. Minor change

Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl4_4Ge2_2

Magnetic frustration in metallic rare earth lanthanides ($Ln$) with $4f$-electrons is crucial for producing interesting magnetic phases with high magnetic anisotropy where intertwined charge and spin degrees of freedom lead to novel phenomena. Here we report on the magnetic, thermodynamic, and electrical transport properties of TbAuAl$_4$Ge$_2$. Tb ions form 2-dimensional triangular lattice layers which stack along the crystalline $c$-axis. The magnetic phase diagram reveals multiple nearly degenerate ordered states upon applying field along the magnetically easy $ab$-plane before saturation. The magnetoresistance in this configuration exhibits intricate field dependence that closely follows that of the magnetization while the specific heat reveals a region of highly enhanced entropy, suggesting the possibility of a non-trivial spin textured phase. For fields applied along the $c$-axis (hard axis), we find linear magnetoresistance over a wide range of fields. We compare the magnetic properties and magnetoresistance with an isostructral GdAuAl$_4$Ge$_2$ single crystals. These results identify TbAuAl$_4$Ge$_2$ as an environment for complex quantum spin states and pave the way for further investigations of the broader $Ln$AuAl$_4$Ge$_2$ family of materials.Comment: 8 pages, 5 figure

Non-saturating large magnetoresistance in semimetals

The rapidly expanding class of quantum materials known as {\emph{topological semimetals}} (TSM) display unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility ($\chi$), the tangent of the Hall angle ($\tan\theta_H$) along with magnetoresistance in four different non-magnetic semimetals with high mobilities, NbP, TaP, NbSb$_2$ and TaSb$_2$, all of which exhibit non-saturating large MR. We find that the distinctly different temperature dependences, $\chi(T)$ and the values of $\tan\theta_H$ in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP being uncompensated semimetals with linear dispersion, in which the non-saturating magnetoresistance arises due to guiding center motion, while NbSb$_2$ and TaSb$_2$ being {\it compensated} semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous non-saturating large magnetoresistance in TSMs.Comment: Accepted for publication at Proc. Natl. Acad. Sci., minor revisions, 6 figure