24 research outputs found
Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films
Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer
Phase-sensitive evidence for dx2-y2-pairing symmetry in the parent-structure high-Tc cuprate superconductor Sr1-xLaxCuO2
Even after 25 years of research the pairing mechanism and - at least for
electron doped compounds - also the order parameter symmetry of the high
transition temperature (high-Tc) cuprate superconductors is still under debate.
One of the reasons is the complex crystal structure of most of these materials.
An exception are the infinite layer (IL) compounds consisting essentially of
CuO2 planes. Unfortunately, these materials are difficult to grow and, thus,
there are only few experimental investigations. Recently, we succeeded in
depositing high quality films of the electron doped IL compound Sr1-xLaxCuO2
(SLCO), with x approximately 0.15, and on the fabrication of well-defined grain
boundary Josephson junctions (GBJs) based on such SLCO films. Here we report on
a phase sensitive study of the superconducting order parameter based on GBJ
SQUIDs from a SLCO film grown on a tetracrystal substrate. Our results show
that also the parent structure of the high-Tc cuprates has dx2-y2-wave
symmetry, which thus seems to be inherent to cuprate superconductivity.Comment: Submitted to PRL, 5 pages, 3 figures, supplementary information
included (4 pages, 4 figures
2015/16 seasonal vaccine effectiveness against hospitalisation with influenza a(H1N1)pdm09 and B among elderly people in Europe: Results from the I-MOVE+ project
We conducted a multicentre test-negative caseâ\u80\u93control study in 27 hospitals of 11 European countries to measure 2015/16 influenza vaccine effectiveness (IVE) against hospitalised influenza A(H1N1)pdm09 and B among people aged â\u89¥ 65 years. Patients swabbed within 7 days after onset of symptoms compatible with severe acute respiratory infection were included. Information on demographics, vaccination and underlying conditions was collected. Using logistic regression, we measured IVE adjusted for potential confounders. We included 355 influenza A(H1N1)pdm09 cases, 110 influenza B cases, and 1,274 controls. Adjusted IVE against influenza A(H1N1)pdm09 was 42% (95% confidence interval (CI): 22 to 57). It was 59% (95% CI: 23 to 78), 48% (95% CI: 5 to 71), 43% (95% CI: 8 to 65) and 39% (95% CI: 7 to 60) in patients with diabetes mellitus, cancer, lung and heart disease, respectively. Adjusted IVE against influenza B was 52% (95% CI: 24 to 70). It was 62% (95% CI: 5 to 85), 60% (95% CI: 18 to 80) and 36% (95% CI: -23 to 67) in patients with diabetes mellitus, lung and heart disease, respectively. 2015/16 IVE estimates against hospitalised influenza in elderly people was moderate against influenza A(H1N1)pdm09 and B, including among those with diabetes mellitus, cancer, lung or heart diseases
Termination Control of (001) and (110) NdGaO3 Single-Crystal Substrates by Selective Chemical Etching
Controlling the surface morphology and composition of the perovskite substrates is a critical aspect in tuning the final properties of the deposited films and of their interfaces. The paper reports on a chemical etching method developed for (110) and (001) NdGaO3 single crystal substrates in order to obtain a well-defined GaO2−x-terminated surface. The etching process is based on a HF + NH4OH solution and includes an annealing step performed in air or under O2 flow at temperatures of 800–1000 °C. In order to obtain the desired composition and surface morphology, the etching procedure was optimized for the vicinal step density at the surface and substrate crystal orientation. Growth nucleation studies of one-unit-cell MeO films (Me = Ti, Sr, Ba) on chemically etched and on only annealed substrates were performed in order to determine the composition of the substrate topmost layer. The results indicate that the chemically etched NdGaO3 substrate surface has a predominantly GaO2−x termination, with a lower free surface energy compared to the NdO1+x termination
Amour et flagellation : passions, manies, aberrations : notes, souvenirs et observations d'un montmartrois baladeur
Precede al tít. : LubricitéTexto fechado en 1895 en la ded. que figura en contrapor