A High Efficiency Lateral Light Emitting Device on SOI

The infrared light emission of lateral p/sup +/-p-n/sup +/ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco

Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary applications are electroosmotic flow speed measurement, detection of absorptivity of liquids in the channe

Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes

Recently different and contradicting results regarding the influence of dislocation loops on light emitting efficiency of Si-based LEDs at room temperature were published [1-4]. We report our results on light emission of devices called DILED and DiFLED which are with and without dislocation loops, respectively. The p-n junction in the DiFLED device was realized by dopant diffusion while using ion implantation with various ion energies for DILED. Electroluminescence (EL) has been used to investigate room-temperature light-emission and the contribution of dislocation loops by comparison of the characteristics between the DiFLED and DILED devices. In this paper, the device fabrication, working principle and properties will be discussed. The electrical and optical characteristics of the different devices were measured and discussed. Some simulation results using the Sivalco code give more insight on the effects of dislocation loops

Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. In this chapter, the device fabrication process, working principle and properties will be discussed. Change in the interference fringe of the antifuse spectra has been measured due to the filling of the channel. Preliminary possible applications are electro-osmotic flow speed measurement, detection of absorptivity of liquids in the channel

Novel integration of a microchannel with a silicon light emitting diode antifuse

Light emitting diode antifuses have been integrated into a microfluidic device that is realized with extended standard IC-compatible technological steps. The device comprises a microchannel sandwiched between a photodiode detector and a nanometre-scale diode antifuse light emitter. In this paper, the device fabrication process, working principle and properties and possible applications will be discussed. Changes in the interference fringe of the antifuse spectra due to the filling of the channel have been measured. Potential applications are electro-osmotic flow speed measurement, detection of absorptivity of liquids in the channel, detection of changes of the refractive index of the medium in the channel, e.g. air bubbles, particles in the liquid

A Novel Silicon Electro-Optic Device for sensor applications

Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photon