Single Crystal Sapphire at milli-Kelvin Temperatures: Observation of Electromagnetically Induced Thermal Bistability in High Q-factor Whispering Gallery Modes

Resonance modes in single crystal sapphire ($\alpha$-Al$_2$O$_3$) exhibit extremely high electrical and mechanical Q-factors ($\approx 10^9$ at 4K), which are important characteristics for electromechanical experiments at the quantum limit. We report the first cooldown of a bulk sapphire sample below superfluid liquid helium temperature (1.6K) to as low as 25mK. The electromagnetic properties were characterised at microwave frequencies, and we report the first observation of electromagnetically induced thermal bistability in whispering gallery modes due to the material $T^3$ dependence on thermal conductivity and the ultra-low dielectric loss tangent. We identify "magic temperatures" between 80 to 2100 mK, the lowest ever measured, at which the onset of bistability is suppressed and the frequency-temperature dependence is annulled. These phenomena at low temperatures make sapphire suitable for quantum metrology and ultra-stable clock applications, including the possible realization of the first quantum limited sapphire clock.Comment: 5 pages, 4 figure

Discovery of Bragg confined hybrid modes with high Q-factor in a hollow dielectric resonator

The authors report on observation of Bragg confined mode in a hollow cylindrical dielectric cavity. A resonance was observed at 13.4 $GHz$ with an unloaded Q-factor of order $2\times10^5$, which is more than a factor of 6 above the dielectric loss limit. Previously such modes have only been realized from pure Transverse Electric modes with no azimuthal variations and only the $E_{\phi}$ component. From rigorous numeric simulations it is shown that the mode is a hybrid mode with non-zero azimuthal variations and with dominant $E_r$ and $E_{\phi}$ electric field components and $H_z$ magnetic field component.Comment: Accepted to be published in Applied Physics Letter

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.Comment: 7 pages, 6 figure

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method

Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by Whispering Gallery modes.Comment: 8 pages, 3 figure

Towards achieving strong coupling in 3D-cavity with solid state spin resonance

We investigate the microwave magnetic field confinement in several microwave 3D-cavities, using 3D finite-element analysis to determine the best design and achieve strong coupling between microwave resonant cavity photons and solid state spins. Specifically, we design cavities for achieving strong coupling of electromagnetic modes with an ensemble of nitrogen vacancy (NV) defects in diamond. We report here a novel and practical cavity design with a magnetic filling factor of up to 4 times (2 times higher collective coupling) than previously achieved using 1D superconducting cavities with small mode volume. In addition, we show that by using a double-split resonator cavity, it is possible to achieve up to 200 times better cooperative factor than the currently demonstrated with NV in diamond. These designs open up further opportunities for studying strong and ultra-strong coupling effects on spins in solids using alternative systems with a wider range of design parameters.Comment: 20 pages, 9 figure