Honour and respect in Danish prisons: Contesting ‘cognitive distortions’ in cognitive-behavioural programmes

© 2016, © The Author(s) 2016. Using empirical data from prison-based cognitive-behavioural programmes, this article considers how prisoners’ subcultural capital shapes their responses to demands for ‘cognitive self-change’. We argue that accounts of ‘respect’ in the prior literature fail to capture how prisoners react to these programmes, and that a discussion of honour (and what we term ‘respect plus’) needs to be incorporated. The empirical material derives from four different cognitive-behavioural programme setups in three Danish prisons and semi-structured interviews with participants and course instructors. By attempting to create accountable and rational actors, who ‘self-manage’, the therapeutic ethos neglects participants’ life experiences and subcultural capital. Open expressions of moral values by prisoners (such as displays of honour and respect) are considered to be cognitive distortions which are dismissed by instructors, while alternative and ‘correct’ thinking styles are prescribed. Our findings advance understandings of the meanings of honour and respect in prisons in general and in cognitive-behavioural programmes in particular.This work was supported by the Danish Council for Independent Research | Social Sciences grant number 12-125308 for the research project Education in Social Skills and Emotional Training

'It's like a Sentence before the Sentence' - Exploring the Pains and Possibilities of Waiting for Imprisonment

AbstractThis article explores the implications of the ‘imprisonment queue’ in Norway. Based on interview data (N = 200), we show that while interviewees waiting to serve their sentences enjoy certain benefits such as being able to prepare for or negotiate the terms of their imprisonment, they also suffer from uncertainty and powerlessness. The suspension of their lives while they wait hinders them in pursuing their ground projects, things that really matter to them. This peculiar phenomenon has not received attention from prison scholars generally, as well as scholars writing on Nordic Exceptionalism specifically. This article addresses that gap and poses questions about the relative mildness of the short Norwegian sentences, and more broadly, about what constitutes punishment.</jats:p

The confined-deconfined interface tension, wetting, and the spectrum of the transfer matrix

The reduced tension $\sigma_{cd}$ of the interface between the confined and the deconfined phase of $SU(3)$ pure gauge theory is determined from numerical simulations of the first transfer matrix eigenvalues. At $T_c = 1/L_t$ we find $\sigma_{cd} = 0.139(4) T_c^2$ for $L_t = 2$. The interfaces show universal behavior because the deconfined-deconfined interfaces are completely wet by the confined phase. The critical exponents of complete wetting follow from the analytic interface solutions of a $\Z(3)$-symmetric $\Phi^4$ model in three dimensions. We find numerical evidence that the confined-deconfined interface is rough.Comment: Talk presented at the International Conference on Lattice Field Theory, Lattice 92, to be published in the proceedings, 4 pages, 4 figures, figures 2,3,4 appended as postscript files, figure 1 not available as a postscript file but identical with figure 2 of Nucl. Phys. B372 (1992) 703, special style file espcrc2.sty required (available from hep-lat), BUTP-92/4

A Multicanonical Algorithm and the Surface Free Energy in SU(3) Pure Gauge Theory

We present a multicanonical algorithm for the SU(3) pure gauge theory at the deconfinement phase transition. We measure the tunneling times for lattices of size L^3x2 for L=8,10, and 12. In contrast to the canonical algorithm the tunneling time increases only moderately with L. Finally, we determine the interfacial free energy applying the multicanonical algorithm.Comment: 6 pages, HLRZ-92-3

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Systematic trends in beta-delayed particle emitting nuclei: The case of beta-p-alpha emission from 21Mg

We have observed beta+-delayed alpha and p-alpha emission from the proton-rich nucleus 21Mg produced at the ISOLDE facility at CERN. The assignments were cross-checked with a time distribution analysis. This is the third identified case of beta-p-alpha emission. We discuss the systematic of beta-delayed particle emission decays, show that our observed decays fit naturally into the existing pattern, and argue that the patterns are to a large extent caused by odd-even effects.Comment: 6 pages, 5 figure