Faraday cage angled-etching of nanostructures in bulk dielectrics

For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the need for these planar, thin-film technologies by enabling in-situ device release and isolation through an angled-etching process. By placing a Faraday cage around the sample during inductively-coupled plasma reactive ion etching (ICP-RIE), the etching plasma develops an equipotential at the cage surface, directing ions normal to its face. In this Article, the effects Faraday cage angle, mesh size, and sample placement have on etch angle, uniformity, and mask selectivity are investigated within a silicon etching platform. Simulation results qualitatively confirm experiments and help to clarify the physical mechanisms at work. These results will help guide FCAE process design across a wide range of material platforms

Coulomb blockade in vertical, bandgap engineered silicon nanopillars

Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature

Scalable Method for the Fabrication and Testing of Glass-Filled, Three-Dimensionally Sculpted Extraordinary Transmission Apertures

This Letter features a new, scalable fabrication method and experimental characterization of glass-filled apertures exhibiting extraordinary transmission. These apertures are fabricated with sizes, aspect ratios, shapes, and side-wall profiles previously impossible to create. The fabrication method presented utilizes top-down lithography to etch silicon nanostructures. These nanostructures are oxidized to provide a transparent template for the deposition of a plasmonic metal. Gold is deposited around these structures, reflowed, and the surface is planarized. Finally, a window is etched through the substrate to provide optical access. Among the structures created and tested are apertures with height to diameter aspect ratios of 8:1, constructed with rectangular, square, cruciform, and coupled cross sections, with tunable polarization sensitivity and displaying unique properties based on their sculpted side-wall shape. Transmission data from these aperture arrays is collected and compared to examine the role of spacing, size, and shape on their overall spectral response. The structures this Letter describes can have a variety of novel applications from the creation of new types of light sources to massively multiplexed biosensors to subdiffraction limit imaging techniques

Large-scale quantum-emitter arrays in atomically thin semiconductors.

Quantum light emitters have been observed in atomically thin layers of transition metal dichalcogenides. However, they are found at random locations within the host material and usually in low densities, hindering experiments aiming to investigate this new class of emitters. Here, we create deterministic arrays of hundreds of quantum emitters in tungsten diselenide and tungsten disulphide monolayers, emitting across a range of wavelengths in the visible spectrum (610-680 nm and 740-820 nm), with a greater spectral stability than their randomly occurring counterparts. This is achieved by depositing monolayers onto silica substrates nanopatterned with arrays of 150-nm-diameter pillars ranging from 60 to 190 nm in height. The nanopillars create localized deformations in the material resulting in the quantum confinement of excitons. Our method may enable the placement of emitters in photonic structures such as optical waveguides in a scalable way, where precise and accurate positioning is paramount

Confinement of long-lived interlayer excitons in WS 2 /WSe 2 heterostructures

Abstract: Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. Long-lived excitons are required to achieve high particle densities, to mediate thermalisation, and to allow for spatially and temporally correlated phases. Additionally, the ability to confine them in periodic arrays is key to building a solid-state analogue to atoms in optical lattices. Here, we demonstrate interlayer excitons with lifetime approaching 0.2 ms in a layered-material heterostructure made from WS2 and WSe2 monolayers. We show that interlayer excitons can be localised in an array using a nano-patterned substrate. These confined excitons exhibit microsecond-lifetime, enhanced emission rate, and optical selection rules inherited from the host material. The combination of a permanent dipole, deterministic spatial confinement and long lifetime places interlayer excitons in a regime that satisfies one of the requirements for simulating quantum Ising models in optically resolvable lattices

Bandgap Engineering Silicon Nanopillars

Vertically oriented , bandgap engineered silicon nanopillars were fabricated and addressed. Devices were fabricated via a three dimensional etching process which created sub-5 nm constrictions in silicon radius upon oxidation. This effect was used to create a Coulomb blockade device. Devices were tested at room and liquid nitrogen temperatures. They showed a clear blockade effect distinctive of an asymmetric double tunnel junction at low temperatures which disappeared when tested at higher temperatures. Different device fabrication parameters were also tested to develop high-current devices, including chip anneal time. Furthermore, both device fabrication steps and current flow were modeled and simulated