Equilibrium Low Temperature Heat Capacity of the Spin Density Wave compound (TMTTF)2 Br: effect of a Magnetic Field

We have investigated the effect of the magnetic field (B) on the very low-temperature equilibrium heat capacity ceq of the quasi-1 D organic compound (TMTTF)2Br, characterized by a commensurate Spin Density Wave (SDW) ground state. Below 1K, ceq is dominated by a Schottky-like contribution, very sensitive to the experimental time scale, a property that we have previously measured in numerous DW compounds. Under applied field (in the range 0.2- 7 T), the equilibrium dynamics, and hence ceq extracted from the time constant, increases enormously. For B = 2-3 T, ceq varies like B2, in agreement with a magnetic Zeeman coupling. Another specific property, common to other Charge/Spin density wave (DW) compounds, is the occurrence of metastable branches in ceq, induced at very low temperature by the field exceeding a critical value. These effects are discussed within a generalization to SDWs in a magnetic field of the available Larkin-Ovchinnikov local model of strong pinning. A limitation of the model when compared to experiments is pointed out.Comment: 10 pages, 11 figure

Recent results on energy relaxation in disordered charge and spin density waves

We briefly review different approaches used recently to describe collective effects in the strong pinning model of disordered charge and spin density waves, in connection with the CRTBT very low temperature heat relaxation experiments.Comment: 4 pages, invited talk at ECRYS-200

Slow relaxation experiments in disordered charge and spin density waves: collective dynamics of randomly distributed solitons

We show that the dynamics of disordered charge density waves (CDWs) and spin density waves (SDWs) is a collective phenomenon. The very low temperature specific heat relaxation experiments are characterized by: (i) ``interrupted'' ageing (meaning that there is a maximal relaxation time); and (ii) a broad power-law spectrum of relaxation times which is the signature of a collective phenomenon. We propose a random energy model that can reproduce these two observations and from which it is possible to obtain an estimate of the glass cross-over temperature (typically $T_g \simeq 100 - 200$ mK). The broad relaxation time spectrum can also be obtained from the solutions of two microscopic models involving randomly distributed solitons. The collective behavior is similar to domain growth dynamics in the presence of disorder and can be described by the dynamical renormalization group that was proposed recently for the one dimensional random field Ising model [D.S. Fisher, P. Le Doussal and C. Monthus, Phys. Rev. Lett. {\bf 80}, 3539 (1998)]. The typical relaxation time scales like $\tau^{\rm typ} \sim \tau_0 \exp{(T_g/T)}$. The glass cross-over temperature $T_g$ related to correlations among solitons is equal to the average energy barrier and scales like $T_g \sim 2 x \xi_0 \Delta$. $x$ is the concentration of defects, $\xi_0$ the correlation length of the CDW or SDW and $\Delta$ the charge or spin gap.Comment: 20 pages, 16 figure

Fractional power-law susceptibility and specific heat in low temperature insulating state of o-TaS_{3}

Measurements of the magnetic susceptibility and its anisotropy in the quasi-one-dimensional system o-TaS_{3} in its low-T charge density wave (CDW) ground state are reported. Both sets of data reveal below 40 K an extra paramagnetic contribution obeying a power-law temperature dependence \chi(T)=AT^{-0.7}. The fact that the extra term measured previously in specific heat in zero field, ascribed to low-energy CDW excitations, also follows a power law C_{LEE}(0,T)=CT^{0.3}, strongly revives the case of random exchange spin chains. Introduced impurities (0.5% Nb) only increase the amplitude C, but do not change essentially the exponent. Within the two-level system (TLS) model, we estimate from the amplitudes A and C that there is one TLS with a spin s=1/2 localized on the chain at the lattice site per cca 900 Ta atoms. We discuss the possibility that it is the charge frozen within a soliton-network below the glass transition T_{g}~40 K determined recently in this system.Comment: 7 pages, 3 figures, submitted to Europhysics Letter

Interplay between phase defects and spin polarization in the specific heat of the spin density wave compound (TMTTF)_2Br in a magnetic field

Equilibrium heat relaxation experiments provide evidence that the ground state of the commensurate spin density wave (SDW) compound (TMTTF)$_2$Br after the application of a sufficient magnetic field is different from the conventional ground state. The experiments are interpreted on the basis of the local model of strong pinning as the deconfinement of soliton-antisoliton pairs triggered by the Zeeman coupling to spin degrees of freedom, resulting in a magnetic field induced density wave glass for the spin carrying phase configuration.Comment: 4 pages, 5 figure

Energy relaxation in disordered charge and spin density waves

We investigate collective effects in the strong pinning model of disordered charge and spin density waves (CDWs and SDWs) in connection with heat relaxation experiments. We discuss the classical and quantum limits that contribute to two distinct contribution to the specific heat (a $C_v \sim T^{-2}$ contribution and a $C_v \sim T^{\alpha}$ contribution respectively), with two different types of disorder (strong pinning versus substitutional impurities). From the calculation of the two level system energy splitting distribution in the classical limit we find no slow relaxation in the commensurate case and a broad spectrum of relaxation times in the incommensurate case. In the commensurate case quantum effects restore a non vanishing energy relaxation, and generate stronger disorder effects in incommensurate systems. For substitutional disorder we obtain Friedel oscillations of bound states close to the Fermi energy. With negligible interchain couplings this explains the power-law specific heat $C_v \sim T^{\alpha}$ observed in experiments on CDWs and SDWs combined to the power-law susceptibility $\chi(T)\sim T^{-1+\alpha}$ observed in the CDW o-TaS$_3$.Comment: 13 pages, 10 figures, improvements in the presentatio

Evidence of 1D behaviour of He4^4 confined within carbon-nanotube bundles

We present the first low-temperature thermodynamic investigation of the controlled physisorption of He$^{4}$ gas in carbon single-wall nanotube (SWNT) samples. The vibrational specific heat measured between 100 mK and 6 K demonstrates an extreme sensitivity to outgassing conditions. For bundles with a few number of NTs the extra contribution to the specific heat, C$_{ads}$, originating from adsorbed He$^{4}$ at very low density displays 1D behavior, typical for He atoms localized within linear channels as grooves and interstitials, for the first time evidenced. For larger bundles, C$_{ads}$ recovers the 2D behaviour akin to the case of He$^{4}$ films on planar substrates (grafoil).Comment: 4 pages, 3 figures, submitted to Phys. Rev. Let

Električna vodljivost, Hallov koeficijent i termoelektrična snaga ikosaedarskih i-Al 62Cu25.5Fe12.5 i i-Al63Cu25Fe12 kvazikristala

The electrical conductivity, Hall coefficient and thermoelectric power of icosahedral i-Al62Cu25.5Fe12.5 quasicrystal samples in the temperature range 2 K - 340 K are measured, and comparison with icosahedral i-Al63Cu25Fe12 quasicrystal samples is made. We have analysed the temperature dependence of the conductivity below 70 K and the results of this analysis are consistent with the predictions of the weak-localisation and the electron-electron interaction theories. The temperature dependence of the electrical conductivity, Hall coefficient and thermoelectric power above 40 K are consistently explained by a two-band model. Although the overlapping of the valence and conduction bands at Fermi level is responsible for the coexistence of both types of carriers, and it enables us to describe quasicrystals as semi-metals, the temperature variation of the electrical conductivity is determined by that of carrier density which makes the situation essentially the same as that in normal semiconductors.Mjerili smo električnu vodljivost, Hallov koeficijent i termoelektričnu snagu uzorka ikosaedarskog kvazikristala i-Al62Cu25.5Fe12.5 u području temperature 2 K – 340 K i usporedili s uzorkom ikosaedarskog kvazikristala i-Al62Cu25.5Fe12.5. Analizirali smo temperaturnu ovisnost električne vodljivosti ispod 70 K i ustanovili da su rezultati u skladu s predviđanjima teorija slabe lokalizacije i međudjelovanja elektronelektron. Ovisnost električne vodljivosti, Hallovog koeficijenta i termoelektrične snage o temperaturi iznad 40 K uspješno se objašnjava modelom dviju vrpci. Iako je predodžba o preklapanju valentne i vodljive vrpce na Fermijevoj razini odgovorna za istovremeno postojanje dviju vrsta nositelja i za opis kvazikristala kao polumetala, temperaturna ovisnost električne vodljivosti je, kao i kod normalnih poluvodiča, određena promjenom gustoće nositelja

Električna vodljivost, Hallov koeficijent i termoelektrična snaga ikosaedarskih i-Al 62Cu25.5Fe12.5 i i-Al63Cu25Fe12 kvazikristala

The electrical conductivity, Hall coefficient and thermoelectric power of icosahedral i-Al62Cu25.5Fe12.5 quasicrystal samples in the temperature range 2 K - 340 K are measured, and comparison with icosahedral i-Al63Cu25Fe12 quasicrystal samples is made. We have analysed the temperature dependence of the conductivity below 70 K and the results of this analysis are consistent with the predictions of the weak-localisation and the electron-electron interaction theories. The temperature dependence of the electrical conductivity, Hall coefficient and thermoelectric power above 40 K are consistently explained by a two-band model. Although the overlapping of the valence and conduction bands at Fermi level is responsible for the coexistence of both types of carriers, and it enables us to describe quasicrystals as semi-metals, the temperature variation of the electrical conductivity is determined by that of carrier density which makes the situation essentially the same as that in normal semiconductors.Mjerili smo električnu vodljivost, Hallov koeficijent i termoelektričnu snagu uzorka ikosaedarskog kvazikristala i-Al62Cu25.5Fe12.5 u području temperature 2 K – 340 K i usporedili s uzorkom ikosaedarskog kvazikristala i-Al62Cu25.5Fe12.5. Analizirali smo temperaturnu ovisnost električne vodljivosti ispod 70 K i ustanovili da su rezultati u skladu s predviđanjima teorija slabe lokalizacije i međudjelovanja elektronelektron. Ovisnost električne vodljivosti, Hallovog koeficijenta i termoelektrične snage o temperaturi iznad 40 K uspješno se objašnjava modelom dviju vrpci. Iako je predodžba o preklapanju valentne i vodljive vrpce na Fermijevoj razini odgovorna za istovremeno postojanje dviju vrsta nositelja i za opis kvazikristala kao polumetala, temperaturna ovisnost električne vodljivosti je, kao i kod normalnih poluvodiča, određena promjenom gustoće nositelja