Biosignatures from Earth-Like Planets Around M Dwarfs

Coupled one-dimensional photochemical-climate calculations have been performed for hypothetical Earth-like planets around M dwarfs. Visible, near-infrared and thermal-infrared synthetic spectra of these planets were generated to determine which biosignature gases might be observed by a future, space-based telescope. Our star sample included two observed active M dwarfs, AD Leo and GJ 643, and three quiescent model stars. The spectral distribution of these stars in the ultraviolet generates a different photochemistry on these planets. As a result, the biogenic gases CH4, N2O, and CH3Cl have substantially longer lifetimes and higher mixing ratios than on Earth, making them potentially observable by space-based telescopes. On the active M-star planets, an ozone layer similar to Earth's was developed that resulted in a spectroscopic signature comparable to the terrestrial one. The simultaneous detection of O2 (or O3) and a reduced gas in a planet's atmosphere has been suggested as strong evidence for life. Planets circling M stars may be good locations to search for such evidence.Comment: 34 pages, 10 figures, Astrobiology, in pres

Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed

Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed

Large field particle beam optics for projection and proximity printing and for maskless lithography

Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In cooperation with IBM Storage Technology Division, ion projection patterning of magnetic media layers has been demonstrated. With masked ion beam proximity techniques, unique capabilities for lithography on nonplanar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBL) and masked ion beam direct structuring (MIBS) tool with sub-20-nm resolution capability within 88-mm¿ exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume projection maskless lithography (projection-ML2) is discussed. In the case of projection-ML2 there are advantages of using electrons instead of ions. Including gray scaling, an improved concept for a ¿50-nm projection-ML2 system is presented with the potential to meet a throughput of 20 wafers per hour (300 mm)