Single Event Effects in CMOS Image Sensors

In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI) happened. However Single Event Transient (SET) effects happened on frames: line disturbances, and half or full circular clusters of white pixels. The collection of charges in cluster was investigated with arrays of two pixel width (7 and 10 \textmu{}m), with bulk and epitaxial substrates. This paper shows technological and design parameters involved in the transient events. It also shows that STARDUST simulation software can predict cluster obtained for bulk substrate devices. However, the discrepancies in epitaxial layer devices are large - which shows the need for an improved model

Vulnerability of optical detection systems to megajoule class laser radiative environment

The Laser MegaJoule (LMJ) facility will host inertial confinement fusion experiments in order to achieve ignition by imploding a Deuterium-Tritium filled microballoon [1]. In this context an X-ray imaging system is necessary to diagnose the core size and the shape of the target in the 10-100 keV band. Such a diagnostic will be composed of two parts: an X-ray optical system and a detection assembly. The survivability of each element of this diagnostic has to be ensured within the mixed pulse consisting of X-rays, gamma rays and 14 MeV neutrons created by fusion reactions. The design of this diagnostic will take into account optics and detectors vulnerability to neutron yield of at least 1016. In this work, we will present the main results of our vulnerability studies and of our hardening-by-system and hardening-by-design studies

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

This paper focuses on radiation-induced dose and single event effects in digital CMOS image sensors using pinned photodiodes. Proton irradiations were used to study cumulative effects. As previously observed, the dark current is the main electrical parameter affected by protons. The mean dark current increase appears proportional to Srour's universal damage factor. Therefore, the degradation is mainly attributed to displacement damage in the pinned photodiode. Heavy ion tests are also reported in this work. This study focuses on single event effects in digital CMOS imagers using numerous electronic functions such as column ADCs, a state machine and registers. Single event transients, upsets and latchups are observed and analyzed. The cross sections of these single events are transposed to specific space imaging missions in order to show that the digital functions can fit the mission requirements despite these perturbations

Comparison of the 2D and 3D integrated circuit fabrication process for visible imaging SPAD arrays

SPAD arrays for visible imaging are analyzed in order to assess the gain of performances with a 3D integration process. A practical example is given with the available design kit of a two layer technology

Exploration of high density interconnect 3D stacking for SPAD arrays

Recent improvements in high density interconnect technologies bring new options for microelectronic device processes. One of these options is currently explored for CMOS image sensor (CIS) applications. The high interconnect density is used to create one bond point per pixel while maintaining a relatively low pixel pitch. The resulting electro-optical performances are improved and the constraints on electronic readout circuit are relaxed. The advantages are particularly interesting for SPAD arrays. The SPADs need large area electronic readout circuits. Moreover, their intrinsic sensitivity makes them vulnerable to the noise induced by the close proximity of the digital readout circuits. This work analyzes the benefits and limitations of the 3D high density interconnect process. The laboratory’s experience of the design of a 3D-IC conventional CIS is used to design and simulate a SPAD array image sensor; showing the possibilities for both performances and system level integration

Single Event Effects in 4T Pinned Photodiode Image Sensors

Presentation on the Single Event Effects (SEEs) in 4T Pinned Photodiode Image Sensors when they are exposed to a heavy ion flux

Highly Miniaturized SWIR Off-The-Shelf Camera Head for Space Applications

3D PLUS has developed in the framework of its camera products development, and in collaboration with the Centre National d\u27Etudes Spatiales (CNES), an off-the-shelf highly miniaturized SWIR camera head for space applications. This opto-electronic module has been integrated using 3D PLUS packaging technology and electronics design expertise to design a product as compact and optimized as possible, suitable for wide range of space applications. This poster presents the development and manufacturing of 3D PLUS 3DCM830 SWIR Space Camera Head