Investigation of the Saturation of Elemental Concentration in the Depth Profile of Low Energy Silver Ion Implants in Silicon

For the efficient absorption of light in a broad wavelength band, Si photovoltaic devices require a high concentration of metal atoms at a shallow depth up to a few 10s of nm in the Si substrates. Low energy (< 50 keV) implantation of Ag ions in Si is one of the most suitable synthesis steps to facilitate the formation of these metal nanoclusters at the shallow depths in Si. However, during the low energy implantation of the heavy ions, one of the unintended consequences is the sputtering of target atoms particularly if the target is made of lower Z materials such as Si. In this study, we have investigated the re-distribution of atoms in the target layers due to the surface sputtering effects from 50 keV Ag ion implantation in Si substrates. Initially, the implant profile was estimated with the widely used static simulation code, theStopping and Range of Ions in Matter (SRIM). However, it’s simulation routine lacks any consideration of the fluence dependent evolution of the target material. Therefore, we have explored the use of another ion-solid interaction code T-DYN, which considers the dynamic changes in the thickness and/or composition of the target material during the implantation process. For 50 keV Ag ion implantation in Si, the T-DYN simulation predicts the Ag ion depth profile reaches a maximum or saturation in the concentration at a critical ion fluence of ~7×1016 atoms/cm2, whereas for a more heavier element like Au, similar saturation in the concentration is predicted at a relatively lower fluence of ~4×1016 atoms/cm2. The depth profiles of the implanted Ag atoms extracted from experiments utilizing the Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy characterization techniques show asymmetric distributions with the position of peak concentration depth gradually moving towards the Si surface with increasing implant ion fluence. Once the implantation ion fluence reached a critical value, the peak value of the elemental concentration is seen saturated similar to the predictions from T-DYN simulations

Redistribution of Nickel Ions Embedded within Indium Phosphide Via Low Energy Dual Ion Implantations

Transition-metal doped Indium Phosphide (InP) has been studied over several decades for utilization in optoelectronics applications. Recently, interesting magnetic properties have been reported for metal clusters formed at different depths surrounded by a high quality InP lattice. In this work, we have reported accumulation of Ni atoms at various depths in InP via implantation of Ni- followed by H– and subsequently thermal annealing. Prior to the ion implantations, the ion implant depth profile was simulated using an ion-solid interaction code SDTrimSP, incorporating dynamic changes in the target matrix during ion implantation. Initially, 50 keV Ni- ions are implanted with a fluence of 2 × 1015 atoms cm-2, with a simulated peak deposition profile approximately 42 nm from the surface. 50 keV H- ions are then implanted with a fluence of 1.5 × 1016 atoms cm-2. The simulation result indicates that the H- creates damages with a peak defect center ~400 nm below the sample surface. The sample has been annealed at 50°C in an Ar rich environment for approximately 1hr. During the annealing, H vacates the lattice, and the formed nano-cavities act as trapping sites and a gettering effect for Ni diffusion into the substrate. The distribution of Ni atoms in InP samples are estimated by utilizing Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy based depth profiling while sputtering the sample with Ar-ion beams. In the sample annealed after H implantation, the Ni was found to migrate to deeper depths of 125 nm than the initial end of range of 70 nm

Investigation of structural and optical properties of Ag nanoclusters formed in Si(100) after multiple implantations of low energies Ag ions and post-thermal annealing at a temperature below the Ag-Si eutectic point

This paper investigates the synthesis of Ag NCs in Si(100) substrate by implanting multiple energies and fluences of Ag ions and subsequent thermal annealing

Ion Beam Materials Analysis and Modifications At keV to MeV Energies at the University of North Texas

This paper provides an overview of the Ion Beam Modification and Analysis Laboratory facilities and some of the current research projects