Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electro-thermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA)   for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device. Keywords: SiC MPS Diode, Electro-thermal, SPICE Model

Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electro-thermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA)   for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device. Keywords: SiC MPS Diode, Electro-thermal, SPICE Model

MODELISATION ET SIMULATION PAR ELEMENTS FINIES D’UN CABLE ELECTRIQUE DE PUISSANCE A 4 CONDUCTEURS

The Electromagnetic Compatibility (EMC) has became a major constraint in the design of power electronics systems, specifically on the static converters and their connection with electricity network and with the load (Motor). Connecting cables with the electricity network, and with the load are the main transmitters of very stringent electromagnetic interference (EMI) generated by the semiconductors used (converter) operating at higher frequencies, we are particularly interested in common mode conducted interferences (CM) that are the most penalizing mode in this kind of system